SBOK084 December   2023 SN54SC3T97-SEP , SN54SC3T98-SEP , SN54SC4T00-SEP , SN54SC4T02-SEP , SN54SC4T125-SEP , SN54SC4T32-SEP , SN54SC4T86-SEP

PRODUCTION DATA  

  1.   1
  2.   SN54SC4T125-SEP Single-Event Latch-Up (SEL) Radiation Report
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects (SEE)
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 SEL Results
    2. 5.2 Event Rate Calculations
  9. 6Summary
  10. 7References

1 Overview

SN54SC4T125-SEP contains four independent buffers with 3-state outputs and extended voltage operation to allow for level translation. Each buffer performs the Boolean function Y = A in positive logic. The outputs can be put into a Hi-Z state by applying a High on the OE pin. The output level is referenced to the supply voltage (VCC) and supports 1.8-V, 2.5-V, 3.3-V, and 5-V CMOS levels.

Table 1-1 Overview Information1
DescriptionDevice Information
TI Part Number SN54SC4T125-SEP
MLS NumberSN54SC4T125MPWTSEP
Device Function Radiation Tolerant, Single Power Supply Quadruple Buffer Translator Gate With 3-State Output CMOS Logic Level Shifter
TechnologyLBC9
Exposure Facility Facility for Rare Isotope Beams (FRIB) at Michigan State University – FRIB Single Event Effects (FSEE) Facility
Heavy Ion Fluence per Run1×107 ions / cm2
Irradiation Temperature 125°C (for SEL testing)
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