Two fresh DUTs were used for follow-up SEL characterization. The die temperature of each was held at 125°C as the units were exposed to an ion stream of ¹⁰⁹Ag, for a nominal surface LET of 44.8MeV-cm² /mg (Bragg peak approximately 59.4MeV-cm² /mg). A nominal flux of 10⁵ ions / s-cm² was used, with each run concluding once a fluence of 10⁷ions/cm² was reached. Each DUT was tested at both maximum and minimum supply voltages, and in both buffer and positive-gain circuit configurations, with an input signal of V_IN = 1V for buffer circuits and V_IN = 0.1V for positive-gain circuits. Each output channel was loaded with a 2kΩ resistance to GND (midsupply). No latchup was observed for either DUT under any of the test conditions.

Of the two devices tested, DUT 1 was preserved for documentation purposes. DUT 2 was used for further SET characterization, in addition to two other fresh devices (DUTs 3 and 5). Each device was tested at both maximum and minimum supply voltages in a buffer circuit configuration. An input signal of V_IN = −1.5V was used for all tests, with the oscilloscopes set to a window trigger mode that captured any events where the output shifted by ±100mV or more. Each output channel was loaded with a 2kΩ resistance to GND (midsupply).

Four readpoints of 45.8MeV-cm² / mg, 34.5MeV-cm² / mg, 29.1MeV-cm² / mg, and 19.3MeV-cm² / mg were explored. The conditions for each run are summarized below. An ambient temperature of approximately 20°C was recorded in the facility at the time of these tests. See Appendix A for additional data, such as histograms.

Additional follow-up testing was performed using fresh devices (DUTs 6, 7, and 8). For these tests, lower-energy ions were used, to determine the transient onset point. Readpoints of 1.31MeV-cm² / mg, 2.68MeV-cm² / mg, 8.21MeV-cm² / mg, and 18.9MeV-cm² / mg were explored. The test conditions previously described were replicated for these runs.