SBOK052 May 2024 OPA4H014-SEP
Single-event effects of the OPA4H014-SEP radiation tolerant, high-performance, 11MHz, low-noise, precision RRO JFET amplifier were studied. The device was shown through characterization to be latch-up immune up to surface LETEFF = 50MeV-cm2 / mg and T = 125°C, providing additional margin beyond the specified level of surface LETEFF = 43MeV-cm2/ mg and T = 125°C already proven in qualification.