SLUSFA7 July   2025 UCC57142 , UCC57148

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagram
    8. 5.8 Typical Characteristics
  7. 6Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stage
      2. 6.3.2 Enable/Fault (EN/FLT)
      3. 6.3.3 Driver Stage
      4. 6.3.4 Over Current (OC) Protection
      5. 6.3.5 Thermal Shutdown
    4. 6.4 Device Functional Modes
  8. 7 Applications and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Driving MOSFET/IGBT/SiC MOSFET
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 VDD Undervoltage Lockout
          2. 7.2.1.2.2 Power Dissipation
        3. 7.2.1.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
      3. 7.4.3 Thermal Consideration
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DBV|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

Input Stage

The inputs of the UCC5714x device are compatible with TTL based threshold logic and the inputs are independent of the VDD supply voltage. Wider hysteresis (typically 1 V) offers enhanced noise immunity compared to traditional TTL logic implementations. This device also features tight control of the input pin threshold voltage levels which eases system design considerations and ensures stable operation across temperature.

The device features an important protection function wherein, whenever the input pin is in a floating condition, the output is held in the low state. This is achieved with internal pulldown resistors on the input pins as shown in the simplified functional block diagrams. In some applications, due to difference in bias supply sequencing, different ICs power-up at different times. This may cause output of the controller to be in tri-state. This output of the controller gets connected to the input of the driver IC. If the driver IC does not have a pulldown resistor then the output of the driver may go high erroneously and damage the switching power device.

The input stage of the driver should preferably be driven by a signal with a short rise or fall time. Caution must be exercised whenever the driver is used with slowly varying input signals, especially in situations where the device is located in a separate daughter board or PCB layout has long input connection traces:

  • High dI/dt current from the driver output coupled with board layout parasitics can cause ground bounce. Because the device features just one COM pin which may be referenced to the power ground, this may interfere with the differential voltage between Input pins and COM and trigger an unintended change of output state. Because of fast 26 ns propagation delay, this can ultimately result in high-frequency oscillations, which increases power dissipation and poses risk of damage.
  • 1 V Input threshold hysteresis boosts noise immunity compared to most other industry standard drivers.

An external resistance is highly recommended between the output of the driver and the power device instead of adding delays on the input signal. This also limits the rise or fall times to the power device which reduces the EMI. The external resistor has the additional benefit of reducing part of the gate charge related power dissipation in the gate driver device package and transferring it into the external resistor itself.

Finally, because of the unique input structure that allows negative voltage capability on the input caution must be used and limit the input pin slew rate less than 1 V/ns.