SLUSFA7 July   2025 UCC57142 , UCC57148

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagram
    8. 5.8 Typical Characteristics
  7. 6Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stage
      2. 6.3.2 Enable/Fault (EN/FLT)
      3. 6.3.3 Driver Stage
      4. 6.3.4 Over Current (OC) Protection
      5. 6.3.5 Thermal Shutdown
    4. 6.4 Device Functional Modes
  8. 7 Applications and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Driving MOSFET/IGBT/SiC MOSFET
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 VDD Undervoltage Lockout
          2. 7.2.1.2.2 Power Dissipation
        3. 7.2.1.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
      3. 7.4.3 Thermal Consideration
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
  • DBV|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101 ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.