SLUSFA7 July   2025 UCC57142 , UCC57148

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagram
    8. 5.8 Typical Characteristics
  7. 6Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stage
      2. 6.3.2 Enable/Fault (EN/FLT)
      3. 6.3.3 Driver Stage
      4. 6.3.4 Over Current (OC) Protection
      5. 6.3.5 Thermal Shutdown
    4. 6.4 Device Functional Modes
  8. 7 Applications and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Driving MOSFET/IGBT/SiC MOSFET
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 VDD Undervoltage Lockout
          2. 7.2.1.2.2 Power Dissipation
        3. 7.2.1.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
      3. 7.4.3 Thermal Consideration
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DBV|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

Application Information

High-current gate driver devices are required in switching power applications for a variety of reasons. To enable fast switching of power devices and reduce associated switching power losses, a powerful gate driver can be employed between the PWM output of controllers or signal isolation devices and the gates of the power semiconductor devices. Further, gate drivers are indispensable when sometimes it is just not feasible to have the PWM controller directly drive the gates of the switching devices. The situation will be often encountered because the PWM signal from a digital controller or signal isolation device is often a 3.3V or 5V logic signal which is not capable of effectively turning on a power switch. A level-shifting circuitry is needed to boost the logic-level signal to the gate-drive voltage in order to fully turn on the power device and minimize conduction losses. Traditional buffer drive circuits based on NPN/PNP bipolar, (or P- N-channel MOSFET), transistors in totem-pole arrangement, being emitter follower configurations, prove inadequate for this because they lack level-shifting capability and low-drive voltage protection. Gate drivers effectively combine both the level-shifting, buffer drive and UVLO functions. Gate drivers also find other needs such as minimizing the effect of switching noise by locating the high-current driver physically close to the power switch, driving gate-drive transformers and controlling floating power device gates, reducing power dissipation and thermal stress in controllers by moving gate charge power losses into itself.

The UCC5714x is very flexible in this role with a strong drive current capability and wide recommended supply voltage range from UVLO to 26 V. This allows the driver to be used in 5 V bias logic level very high frequency MOSFET applications.

These requirements, coupled with the need for low propagation delays and availability in compact, and low-inductance packages with good thermal capability, make gate driver devices such as the UCC5714x extremely important components in switching power combining benefits of high-performance, low cost, low component count, board space reduction and simplified system design.