ZHCSGC2F June   2017  – January 2019 UCC5310 , UCC5320 , UCC5350 , UCC5390

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1. 3.1 功能框图（S、E 和 M 版本）
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Function
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications for D Package
    7. 7.7  Insulation Specifications for DWV Package
    8. 7.8  Safety-Related Certifications For D Package
    9. 7.9  Safety-Related Certifications For DWV Package
    10. 7.10 Safety Limiting Values
    11. 7.11 Electrical Characteristics
    12. 7.12 Switching Characteristics
    13. 7.13 Insulation Characteristics Curves
    14. 7.14 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Propagation Delay, Inverting, and Noninverting Configuration
      1. 8.1.1 CMTI Testing
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Power Supply
      2. 9.3.2 Input Stage
      3. 9.3.3 Output Stage
      4. 9.3.4 Protection Features
        1. 9.3.4.1 Undervoltage Lockout (UVLO)
        2. 9.3.4.2 Active Pulldown
        3. 9.3.4.3 Short-Circuit Clamping
        4. 9.3.4.4 Active Miller Clamp (UCC53x0M)
    4. 9.4 Device Functional Modes
      1. 9.4.1 ESD Structure
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Designing IN+ and IN– Input Filter
        2. 10.2.2.2 Gate-Driver Output Resistor
        3. 10.2.2.3 Estimate Gate-Driver Power Loss
        4. 10.2.2.4 Estimating Junction Temperature
      3. 10.2.3 Selecting VCC1 and VCC2 Capacitors
        1. 10.2.3.1 Selecting a VCC1 Capacitor
        2. 10.2.3.2 Selecting a VCC2 Capacitor
        3. 10.2.3.3 Application Circuits With Output Stage Negative Bias
      4. 10.2.4 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 PCB Material
  13. 13器件和文档支持
    1. 13.1 文档支持
      1. 13.1.1 相关文档
    2. 13.2 认证
    3. 13.3 相关链接
    4. 13.4 接收文档更新通知
    5. 13.5 社区资源
    6. 13.6 商标
    7. 13.7 静电放电警告
    8. 13.8 术语表
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Pin Configuration and Function

UCC5320S, UCC5350SB, and UCC5390S
8-Pin SOIC
Top View
UCC5310M and UCC5350M
8-Pin SOIC
Top View
UCC5320E and UCC5390E
8-Pin SOIC
Top View

Pin Functions

PIN TYPE DESCRIPTION
NAME NO.
UCC53x0S UCC53x0M UCC53x0E
CLAMP — 7 — I Active Miller-clamp input found on the UCC53x0M used to prevent false turnon of the power switches.
GND1 4 4 4 G Input ground. All signals on the input side are referenced to this ground.
GND2 — — 7 G Gate-drive common pin. Connect this pin to the IGBT emitter. UVLO referenced to GND2 in the UCC53x0E.
IN+ 2 2 2 I Noninverting gate-drive voltage-control input. The IN+ pin has a CMOS input threshold. This pin is pulled low internally if left open. Use Table 4 to understand the input and output logic of these devices.
IN– 3 3 3 I Inverting gate-drive voltage control input. The IN– pin has a CMOS input threshold. This pin is pulled high internally if left open. Use Table 4 to understand the input and output logic of these devices.
OUT — 6 6 O Gate-drive output for UCC53x0E and UCC53x0M versions.
OUTH 6 — — O Gate-drive pullup output found on the UCC53x0S.
OUTL 7 — — O Gate-drive pulldown output found on the UCC53x0S.
VCC1 1 1 1 P Input supply voltage. Connect a locally decoupled capacitor to GND. Use a low-ESR or ESL capacitor located as close to the device as possible.
VCC2 5 5 5 P Positive output supply rail. Connect a locally decoupled capacitor to VEE2. Use a low-ESR or ESL capacitor located as close to the device as possible.
VEE2 8 8 8 P Negative output supply rail for E version, and GND for S and M versions. Connect a locally decoupled capacitor to GND2 for E version. Use a low-ESR or ESL capacitor located as close to the device as possible.