ZHCSGC2F June   2017  – January 2019 UCC5310 , UCC5320 , UCC5350 , UCC5390


  1. 特性
  2. 应用
  3. 说明
    1. 3.1 功能框图(S、E 和 M 版本)
  4. 修订历史记录
  5. Device Comparison Table
  6. Pin Configuration and Function
    1.     Pin Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications for D Package
    7. 7.7  Insulation Specifications for DWV Package
    8. 7.8  Safety-Related Certifications For D Package
    9. 7.9  Safety-Related Certifications For DWV Package
    10. 7.10 Safety Limiting Values
    11. 7.11 Electrical Characteristics
    12. 7.12 Switching Characteristics
    13. 7.13 Insulation Characteristics Curves
    14. 7.14 Typical Characteristics
  8. Parameter Measurement Information
    1. 8.1 Propagation Delay, Inverting, and Noninverting Configuration
      1. 8.1.1 CMTI Testing
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Power Supply
      2. 9.3.2 Input Stage
      3. 9.3.3 Output Stage
      4. 9.3.4 Protection Features
        1. Undervoltage Lockout (UVLO)
        2. Active Pulldown
        3. Short-Circuit Clamping
        4. Active Miller Clamp (UCC53x0M)
    4. 9.4 Device Functional Modes
      1. 9.4.1 ESD Structure
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. Designing IN+ and IN– Input Filter
        2. Gate-Driver Output Resistor
        3. Estimate Gate-Driver Power Loss
        4. Estimating Junction Temperature
      3. 10.2.3 Selecting VCC1 and VCC2 Capacitors
        1. Selecting a VCC1 Capacitor
        2. Selecting a VCC2 Capacitor
        3. Application Circuits With Output Stage Negative Bias
      4. 10.2.4 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 PCB Material
  13. 13器件和文档支持
    1. 13.1 文档支持
      1. 13.1.1 相关文档
    2. 13.2 认证
    3. 13.3 相关链接
    4. 13.4 接收文档更新通知
    5. 13.5 社区资源
    6. 13.6 商标
    7. 13.7 静电放电警告
    8. 13.8 术语表
  14. 14机械、封装和可订购信息


机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)

Estimate Gate-Driver Power Loss

The total loss, PG, in the gate-driver subsystem includes the power losses (PGD) of the UCC53x0 device and the power losses in the peripheral circuitry, such as the external gate-drive resistor.

The PGD value is the key power loss which determines the thermal safety-related limits of the UCC53x0 device, and it can be estimated by calculating losses from several components.

The first component is the static power loss, PGDQ, which includes quiescent power loss on the driver as well as driver self-power consumption when operating with a certain switching frequency. The PGDQ parameter is measured on the bench with no load connected to the OUT or OUTH and OUTL pins at a given VCC1, VCC2, switching frequency, and ambient temperature. In this example, VCC1 is 3.3V and VCC2 is 15 V. The current on each power supply, with PWM switching from 0 V to 3.3 V at 10 kHz, is measured to be ICC1 = 1.67 mA and ICC2 = 1.11 mA. Therefore, use Equation 5 to calculate PGDQ.

Equation 5. UCC5310 UCC5320 UCC5350 UCC5390 P_GDQ.gif

The second component is the switching operation loss, PGDO, with a given load capacitance which the driver charges and discharges the load during each switching cycle. Use Equation 6 to calculate the total dynamic loss from load switching, PGSW.

Equation 6. UCC5310 UCC5320 UCC5350 UCC5390 P_GSW.gif


  • QG is the gate charge of the power transistor at VCC2.

So, for this example application the total dynamic loss from load switching is approximately 18 mW as calculated in Equation 7.

Equation 7. UCC5310 UCC5320 UCC5350 UCC5390 P_GSW(2).gif

QG represents the total gate charge of the power transistor switching 520 V at 50 A, and is subject to change with different testing conditions. The UCC5320S gate-driver loss on the output stage, PGDO, is part of PGSW. PGDO is equal to PGSW if the external gate-driver resistance and power-transistor internal resistance are 0 Ω, and all the gate driver-loss will be dissipated inside the UCC5320S. If an external turn-on and turn-off resistance exists, the total loss is distributed between the gate driver pull-up/down resistance, external gate resistance, and power-transistor internal resistance. Importantly, the pull-up/down resistance is a linear and fixed resistance if the source/sink current is not saturated to 4.3 A/4.4 A, however, it will be non-linear if the source/sink current is saturated. Therefore, PGDO is different in these two scenarios.

Case 1 - Linear Pull-Up/Down Resistor:

Equation 8. UCC5310 UCC5320 UCC5350 UCC5390 P_GDO.gif

In this design example, all the predicted source and sink currents are less than 4.3 A and 4.4 A, therefore, use Equation 9 to estimate the UCC53x0 gate-driver loss.

Equation 9. UCC5310 UCC5320 UCC5350 UCC5390 P_GDO(2).gif

Case 2 - Nonlinear Pull-Up/Down Resistor:

Equation 10. UCC5310 UCC5320 UCC5350 UCC5390 P_GDO(3).gif


  • VOUTH/L(t) is the gate-driver OUTH and OUTL pin voltage during the turnon and turnoff period. In cases where the output is saturated for some time, this value can be simplified as a constant-current source (4.3 A at turnon and 4.4 A at turnoff) charging or discharging a load capacitor. Then, the VOUTH/L(t) waveform will be linear and the TR_Sys and TF_Sys can be easily predicted.

For some scenarios, if only one of the pullup or pulldown circuits is saturated and another one is not, the PGDO is a combination of case 1 and case 2, and the equations can be easily identified for the pullup and pulldown based on this discussion.

Use Equation 11 to calculate the total gate-driver loss dissipated in the UCC53x0 gate driver, PGD.

Equation 11. UCC5310 UCC5320 UCC5350 UCC5390 P_GD.gif