ZHCSGC2F June   2017  – January 2019 UCC5310 , UCC5320 , UCC5350 , UCC5390

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1. 3.1 功能框图(S、E 和 M 版本)
  4. 修订历史记录
  5. Device Comparison Table
  6. Pin Configuration and Function
    1.     Pin Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications for D Package
    7. 7.7  Insulation Specifications for DWV Package
    8. 7.8  Safety-Related Certifications For D Package
    9. 7.9  Safety-Related Certifications For DWV Package
    10. 7.10 Safety Limiting Values
    11. 7.11 Electrical Characteristics
    12. 7.12 Switching Characteristics
    13. 7.13 Insulation Characteristics Curves
    14. 7.14 Typical Characteristics
  8. Parameter Measurement Information
    1. 8.1 Propagation Delay, Inverting, and Noninverting Configuration
      1. 8.1.1 CMTI Testing
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Power Supply
      2. 9.3.2 Input Stage
      3. 9.3.3 Output Stage
      4. 9.3.4 Protection Features
        1. 9.3.4.1 Undervoltage Lockout (UVLO)
        2. 9.3.4.2 Active Pulldown
        3. 9.3.4.3 Short-Circuit Clamping
        4. 9.3.4.4 Active Miller Clamp (UCC53x0M)
    4. 9.4 Device Functional Modes
      1. 9.4.1 ESD Structure
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Designing IN+ and IN– Input Filter
        2. 10.2.2.2 Gate-Driver Output Resistor
        3. 10.2.2.3 Estimate Gate-Driver Power Loss
        4. 10.2.2.4 Estimating Junction Temperature
      3. 10.2.3 Selecting VCC1 and VCC2 Capacitors
        1. 10.2.3.1 Selecting a VCC1 Capacitor
        2. 10.2.3.2 Selecting a VCC2 Capacitor
        3. 10.2.3.3 Application Circuits With Output Stage Negative Bias
      4. 10.2.4 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 PCB Material
  13. 13器件和文档支持
    1. 13.1 文档支持
      1. 13.1.1 相关文档
    2. 13.2 认证
    3. 13.3 相关链接
    4. 13.4 接收文档更新通知
    5. 13.5 社区资源
    6. 13.6 商标
    7. 13.7 静电放电警告
    8. 13.8 术语表
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Active Pulldown

The active pulldown function is used to pull the IGBT or MOSFET gate to the low state when no power is connected to the VCC2 supply. This feature prevents false IGBT and MOSFET turnon on the OUT, OUTL, and CLAMP pins by clamping the output to approximately 2 V.

When the output stages of the driver are in an unbiased or UVLO condition, the driver outputs are held low by an active clamp circuit that limits the voltage rise on the driver outputs. In this condition, the upper PMOS is resistively held off by a pullup resistor while the lower NMOS gate is tied to the driver output through a 500-kΩ resistor. In this configuration, the output is effectively clamped to the threshold voltage of the lower NMOS device, which is approximately 1.5 V when no bias power is available.