ZHCSHQ7B February   2018  – April 2024 UCC21222-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings (Automotive)
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety Limiting Values
    8. 5.8  Electrical Characteristics
    9. 5.9  Switching Characteristics
    10. 5.10 Insulation Characteristics Curves
    11. 5.11 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Minimum Pulses
    2. 6.2 Propagation Delay and Pulse Width Distortion
    3. 6.3 Rising and Falling Time
    4. 6.4 Input and Disable Response Time
    5. 6.5 Programmable Dead Time
    6. 6.6 Power-Up UVLO Delay to OUTPUT
    7. 6.7 CMTI Testing
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 VDD, VCCI, and Undervoltage Lock Out (UVLO)
      2. 7.3.2 Input and Output Logic Table
      3. 7.3.3 Input Stage
      4. 7.3.4 Output Stage
      5. 7.3.5 Diode Structure in the UCC21222-Q1
    4. 7.4 Device Functional Modes
      1. 7.4.1 Disable Pin
      2. 7.4.2 Programmable Dead Time (DT) Pin
        1. 7.4.2.1 DT Pin Tied to VCCI or DT Pin Left Open
        2. 7.4.2.2 Connecting a Programming Resistor between DT and GND Pins
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design With WEBENCH® Tools
        2. 8.2.2.2 Designing INA/INB Input Filter
        3. 8.2.2.3 Select Dead Time Resistor and Capacitor
        4. 8.2.2.4 Select External Bootstrap Diode and its Series Resistor
        5. 8.2.2.5 Gate Driver Output Resistor
        6. 8.2.2.6 Estimating Gate Driver Power Loss
        7. 8.2.2.7 Estimating Junction Temperature
        8. 8.2.2.8 Selecting VCCI, VDDA/B Capacitor
          1. 8.2.2.8.1 Selecting a VCCI Capacitor
          2. 8.2.2.8.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 8.2.2.8.3 Select a VDDB Capacitor
        9. 8.2.2.9 Application Circuits with Output Stage Negative Bias
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Component Placement Considerations
      2. 10.1.2 Grounding Considerations
      3. 10.1.3 High-Voltage Considerations
      4. 10.1.4 Thermal Considerations
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方产品免责声明
      2. 11.1.2 Development Support
        1. 11.1.2.1 Custom Design With WEBENCH® Tools
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 静电放电警告
    7. 11.7 术语表
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

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10.1.1 Component Placement Considerations

  • Low-ESR and low-ESL capacitors must be connected close to the device between the VCCI and GND pins and between the VDD and VSS pins to support high peak currents when turning on the external power transistor.
  • To avoid large negative transients on the switch node VSSA (HS) pin in bridge configurations, the parasitic inductances between the source of the top transistor and the source of the bottom transistor must be minimized.
  • To improve noise immunity when driving the DIS pin from a distant microcontroller, TI recommends adding a small bypass capacitor, ≥ 1000 pF, between the DIS pin and GND.
  • If the dead time feature is used, TI recommends placing the programming resistor RDT and capacitor close to the DT pin of the UCC21222-Q1 to prevent noise from unintentionally coupling to the internal dead time circuit. The capacitor should be ≥ 2.2 nF.