ZHCSER8 December   2015 TPS7A6650H-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Qualification Summary
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Enable (EN)
      2. 7.3.2 Regulated Output (Vout)
      3. 7.3.3 Power-On Reset (PG)
      4. 7.3.4 Reset Delay Timer (CT)
      5. 7.3.5 Undervoltage Shutdown
      6. 7.3.6 Low-Voltage Tracking
      7. 7.3.7 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation With V(VIN) < 4 V
      2. 7.4.2 Operation With EN Control
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 TPS7A6650H-Q1 Typical Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Input Capacitor
          2. 8.2.1.2.2 Output Capacitor
        3. 8.2.1.3 Application Performance Plot
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Package Mounting
      2. 10.1.2 Board Layout Recommendations to Improve PSRR and Noise Performance
    2. 10.2 Layout Example
    3. 10.3 Power Dissipation and Thermal Considerations
  11. 11器件和文档支持
    1. 11.1 商标
    2. 11.2 静电放电警告
    3. 11.3 Glossary
  12. 12机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DGN|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating ambient temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Vin, EN Unregulated input(2) (3) –0.3 45 V
Vout Regulated output –0.3 7 V
CT –0.3 25 V
PG –0.3 Vout V
TJ Operating junction temperature range –40 160 °C
Tstg Storage temperature range –65 160 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to GND
(3) Absolute maximum voltage, withstand 45 V for 200 ms

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1) ±4000 V
Charged device model (CDM), per AEC Q100-011 All pins ±1000
Corner pins (1, 4, 5, and 8) ±1000
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

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6.3 Recommended Operating Conditions

over operating ambient temperature range (unless otherwise noted)
MIN MAX UNIT
Vin Unregulated input 4 40 V
EN 0 40 V
CT 0 20 V
Vout 1.5 5.5 V
PG Low voltage (I/O) 0 5.5 V
TA Operating ambient temperature –40 150 °C

6.4 Thermal Information

THERMAL METRIC(1) TPS7A6650H-Q1 UNIT
DGN (HVSSOP)
8 PINS
RθJA Junction-to-ambient thermal resistance 63.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 53 °C/W
RθJB Junction-to-board thermal resistance(2) 37.4 °C/W
ψJT Junction-to-top characterization parameter 3.7 °C/W
ψJB Junction-to-board characterization parameter 37.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 13.5 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report (SPRA953).
(2) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8.

6.5 Electrical Characteristics

V(Vin) = 14 V, 1 mΩ < ESR < 2 Ω, TJ = –40°C to 160°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE AND CURRENT (Vin)
V(Vin) Input voltage IO = 1 mA 5.5 40 V
I(q) Quiescent current V(Vin) = 5.5 V to 40 V, EN = ON, IO = 0.2 mA 12 22 µA
I(Sleep) Input sleep current No load current and EN = OFF 4 µA
I(EN) EN pin current V(EN) = 40 V 1 µA
V(VinUVLO) Undervoltage detection Ramp V(Vin) down until output turns OFF 2.6 V
V(UVLOhys) Undervoltage hysteresis 1 V
ENABLE INPUT (EN)
VIL Logic input low level 0 0.4 V
VIH Logic input high level 1.7 V
REGULATED OUTPUT (Vout)
V(Vout) Regulated output IO = 1 mA, TJ = 25°C –1% 1%
V(Vin) = 6 V to 40 V, IO = 1 mA to 50 mA –2% 2%
V(line-reg) Line regulation V(Vin) = 5.5 V to 40 V, IO = 50 mA 5 mV
V(load-reg) Load regulation IO = 1 mA to 50 mA 20 mV
V(dropout) Dropout voltage V(dropout) = V(Vin) – V(Vout), IOUT = 50 mA 130 240 mV
IO Output current V(Vout) in regulation 0 50 mA
I(lreg-CL) Output current limit V(Vout) short to ground 500 800 mA
PSRR Power supply ripple rejection(1) V(Vin) = 12 V, IL = 10 mA, output capacitance = 2.2 µF,
V(Vin) = 12 V, IL = 10 mA, output capacitance = 2.2 µF, frequency = 100 Hz 60 dB
V(Vin) = 12 V, IL = 10 mA, output capacitance = 2.2 µF, frequency = 100 kHz 40 dB
RESET (PG)
VOL Reset output, low voltage IOL = 0.5 mA 0.4 V
Ilkg Leakage current Reset pulled Vout through 10-kΩ resistor 1 µA
V(TH-POR) Power-on-reset threshold V(Vout) increasing 89.6 91.6 93.6 % of Vout
V(Thres) Hysteresis 2 % of Vout
RESET DELAY (CT)
I(Chg) Delay-capacitor charging current V(CT) = 0 V 1.4 µA
V(th) Threshold to release PG high 1 V
OPERATING TEMPERATURE RANGE
TJ Junction temperature –40 160 °C
T(shutdown) Junction shutdown temperature 175 °C
T(hyst) Hysteresis of thermal shutdown 20 °C
(1) Design information – Not tested

6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TIMING FOR RESET (PG)
t(POR) Power-on-reset delay Where C = delay capacitor value; capacitance C = 100 nF(1) 50 100 180 ms
t(POR-fixed) No capacitor on pin 100 290 650 µs
t(Deglitch) Reset deglitch time 20 250 µs
(1) This information only is not tested in production and equation basis is (C × 1) / 1 × 10–6 = td (delay time).
Where C = Delay capacitor value. Capacitance C range = 100 pF to 100 nF.

6.7 Qualification Summary

The TPS7A6650H-Q1 device has passed all the Grade 0 level qualification items required in AEC-Q100 with one exception: High temperature storage lifetime (HTSL). For the HTSL item, the Grade 0 level requirement is passing 175ºC for 1000 hours of stress. For this device, it passed at 160°C for 1000 hours stress.

6.8 Typical Characteristics

TPS7A6650H-Q1 D001_SLVSD64.gif
Vin = 14 V No Load
Figure 1. Power-Good Threshold Voltage vs Temperature
TPS7A6650H-Q1 D003_SLVSD64.gif
Vin = 14 V
Figure 3. Ground Current vs Output Current
TPS7A6650H-Q1 D005_SLVSD64.gif
Vin = 14 V
Figure 5. Load Regulation
TPS7A6650H-Q1 D002_SLVSD64.gif
Vin = 14 V IL = 1 mA
Figure 2. Line Regulation
TPS7A6650H-Q1 D004_SLVSD64.gif
IL = 0
Figure 4. Quiescent Current vs Input Voltage
TPS7A6650H-Q1 D006_SLVSD64.gif
Vin = 4 V
Figure 6. Dropout Voltage vs Output Current
TPS7A6650H-Q1 C007_SLVSBL0.png Figure 7. Output Voltage vs Supply Voltage (Fixed 5-V Version, IL = 0)
TPS7A6650H-Q1 C010_SLVSBL0.png Figure 9. Power-Supply Rejection Ratio vs Frequency
TPS7A6650H-Q1 C009_SLVSBL0.png Figure 8. Load Capacitance vs ESR Stability
All oscilloscope waveforms were taken at room temperature.
TPS7A6650H-Q1 Scope-02_SLVSBL0.gif Figure 10. Load Transient Response, 10 ms/div
TPS7A6650H-Q1 Scope-05_SLVSBL0.gif Figure 12. Line Transient Response, IL = 10 mA, 1 V/µs
TPS7A6650H-Q1 Scope-04_SLVSBL0.gif Figure 11. Line Transient Response, IL = 1 mA, 1 V/µs