ZHCS495C November   2011  – January 2017 TPS65135

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Advanced Power-Save Mode for Light-Load Efficiency
      2. 7.3.2 Buck-Boost Mode Operation
      3. 7.3.3 Inherently Good Line-Transient Regulation
      4. 7.3.4 Overvoltage Protection
      5. 7.3.5 Short-Circuit Protection
      6. 7.3.6 Soft-Start Operation
      7. 7.3.7 Output-Current Mismatch
      8. 7.3.8 Setting the Output Voltages
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation with 2.5 V ≤ VI ≤ 5.5 V
      2. 7.4.2 Operation with VI < 2.5 V
      3. 7.4.3 Operation with VI > 5.5 V
      4. 7.4.4 Operation with EN
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Choosing a Suitable Inductor
        2. 8.2.2.2 Choosing Suitable Input and Output Capacitors
        3. 8.2.2.3 Choosing Suitable Feedback Resistors
        4. 8.2.2.4 Measurement Circuit
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings(1)(2)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Voltage VIN, EN, VAUX, FB, OUTP, L2 –0.3 7 V
L1, OUTN –8 7 V
FBG –0.3 0.3 V
Operating junction temperature, TJ –40 150 °C
Operating ambient temperature, TA –40 85 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to ground.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
Machine model (MM) ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN TYP MAX UNIT
VI Input voltage range 2.5 5.5 V
IO(POS) / |IO(NEG)| Output current mismatch 0.5 2
PO Output power (VI = 2.9 V, VO(POS) – VO(NEG) ≤ 10 V) 750 mW
L Inductor(1) 1 2.2 4.7 µH
C(IN) Input Capacitor(1) 4.7 10 µF
CO(POS), CO(NEG) Output Capacitors(1) 4.7 10 20 µF
TA Operating ambient temperature –40 85 °C
TJ Operating junction temperature –40 125 °C
(1) Please refer to Application Information for further information

6.4 Thermal Information

THERMAL METRIC(1) TPS65135 UNIT
RTE (WQFN)
16 PINS
RθJA Junction-to-ambient thermal resistance 44.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 42 °C/W
RθJB Junction-to-board thermal resistance 4.3 °C/W
ψJT Junction-to-top characterization parameter 16.9 °C/W
ψJB Junction-to-board characterization parameter 0.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 16.8 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

VI = 3.7 V, V(EN) = VI, VO(POS) = 5 V, VO(NEG) = –5 V, TA = –40°C to 85°C; typical values are at TA = 25°C
(unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VI Input voltage range 2.5 5.5 V
II(standby) Quiescent current EN = H; measured into VIN pin 7 mA
Shutdown current EN = L; measured into VIN pin 0.1 2 µA
UNDERVOLTAGE LOCKOUT
Input threshold voltage (VIN) (undervoltage lockout) VI rising 2 2.3 V
VI falling 1.8 2.1 V
THERMAL SHUTDOWN
Thermal shutdown junction temperature 140 °C
Thermal shutdown hysteresis 5 °C
ENABLE
High-level input voltage (EN) VI = 2.5 V to 5.5 V 1.2 V
Low-level input voltage (EN) VI = 2.5 V to 5.5 V 0.4 V
R(EN) Pull-down resistor (EN) 200 500 900 kΩ
OUTPUT
VO(POS) Positive output voltage range 3 6 V
Threshold voltage (OUTP) (overvoltage protection) IO(POS) = 10 mA 6.1 7 V
VO(NEG) Negative output voltage range –7 –2.5 V
Threshold voltage (OUTN) (overvoltage protection) IO(NEG) = –10 mA –7.6 -7.1 V
Vref1 Positive output reference voltage –1% 1.24 +1% V
Vref2 Negative output reference voltage –10 0 10 mV
MOSFET on-state resistance (Q1) ID(Q1) = 100 mA 250 mΩ
MOSFET on-state resistance (Q2) ID(Q2) = 100 mA 200 mΩ
MOSFET on-state resistance (Q3) ID(Q3) = 100 mA 500 mΩ
MOSFET on-state resistance (Q4) ID(Q4) = 100 mA 300 mΩ
ID(Q2)max Q2 switch current limit VI = 3.7 V 0.9 1.2 1.6 A
VI = 2.5 V 1 1.5 1.9

6.6 Typical Characteristics

VI= 3.7 V and TA = 25°C unless otherwise noted
TPS65135 TypChar_ilim_temp_SLVS704.png Figure 1. Switch Current Limit vs Temperature
TPS65135 TypChar_iq_temp_SLVS704.png Figure 3. Input Supply Current vs Temperature
TPS65135 TypChar_vref1_temp_SLVS704.png Figure 5. Reference Voltage Vref1 vs Temperature
TPS65135 TypChar_ilim_vin_SLVS704.png Figure 2. Switch Current Limit vs Input Supply Voltage
TPS65135 TypChar_iq_vin_SLVS704.png Figure 4. Input Supply Current vs Input Supply Voltage
TPS65135 TypChar_vref2_temp_SLVS704.png Figure 6. Reference Voltage Vref2 vs Temperature