ZHCSQG4E March   2004  – April 2022 TPS65130 , TPS65131

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Conversion
      2. 7.3.2 Control
      3. 7.3.3 Enable
      4. 7.3.4 Load Disconnect
      5. 7.3.5 Soft-Start
      6. 7.3.6 Overvoltage Protection
      7. 7.3.7 Undervoltage Lockout
      8. 7.3.8 Overtemperature Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power-Save Mode
      2. 7.4.2 Full Operation with VIN > 2.7 V
      3. 7.4.3 Limited Operation with VUVLO < VIN < 2.7 V
      4. 7.4.4 No Operation with VIN < VUVLO
  8. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Programming the Output Voltage
          1. 8.2.2.1.1 Boost Converter
          2. 8.2.2.1.2 Inverting Converter
        2. 8.2.2.2 Inductor Selection
        3. 8.2.2.3 Capacitor Selection
          1. 8.2.2.3.1 Input Capacitor
          2. 8.2.2.3.2 Output Capacitors
        4. 8.2.2.4 Rectifier Diode Selection
        5. 8.2.2.5 External PMOS Selection
        6. 8.2.2.6 Stabilizing the Control Loop
          1. 8.2.2.6.1 Feedforward Capacitor
          2. 8.2.2.6.2 Compensation Capacitors
      3. 8.2.3 Analog Supply Filter
        1. 8.2.3.1 RC-Filter
        2. 8.2.3.2 LC-Filter
      4. 8.2.4 Application Curves
        1.       Power Supply Recommendations
  9. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
    3. 9.3 Thermal Considerations
  10. 10Device and Documentation Support
    1. 10.1 Device Support
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 术语表
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGE|24
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.2.1 Design Requirements

Figure 8-1 uses the following parameters:

Table 8-1 Design Parameters
DESIGN PARAMETEREXAMPLE VALUE
Input voltage range2.7 V to 5.5 V
Boost converter output voltage, VPOSR1 = 1 MΩ
R2 = 130kΩ
C9 = 6.8 pF		10.5 V
Inverting converter output voltage, VNEGR3 = 1 MΩ
R4 = 121.2 kΩ
C10 = 7.5 pF		–10 V
Table 8-2 List of Components
REFERENCESETUPVALUE, DESCRIPTION
C1, C2—4.7 µF, ceramic, 6.3 V, X5R
C30.1 µF, ceramic, 10 V, X5R
C4, C54 x 4.7 µF, ceramic, 25 V, X7R
C610 nF, ceramic, 16 V, X7R
C74.7 nF, 50 V, C0G
C8220 nF, ceramic, 6.3 V, X5R
R1VPOS = 10.5 V1 MΩ
VPOS = 15 V975 kΩ
R2VPOS = 10.5 V130 kΩ
VPOS = 15 V85.8 kΩ
R3VNEG = –10 V1 MΩ
VNEG = –15 V1.3 MΩ
R4VNEG = –10 V121.2 kΩ
VNEG = –15 V104.8 kΩ
R7—100 Ω
D1, D2Schottky, 1 A, 20 V, Onsemi MBRM120
L1, L2Wurth Elektronik 7447789004 (TPS65130), EPCOS B82462-G4472 (TPS65131)
Q1MOSFET, P-channel, 12 V, 4 A, Vishay Si2323DS