ZHCSFX4 December   2016 TPS63027

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 典型应用
  5. 5 修订历史记录
  6. 6  Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Undervoltage Lockout (UVLO)
      2. 9.3.2 Output Discharge Function
      3. 9.3.3 Thermal Shutdown
      4. 9.3.4 Softstart
      5. 9.3.5 Short Circuit Protection
    4. 9.4 Device Functional Modes
      1. 9.4.1 Control Loop Description
      2. 9.4.2 Power Save Mode Operation
      3. 9.4.3 Current Limit
      4. 9.4.4 Supply and Ground
      5. 9.4.5 Device Enable
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Output Filter Design
        2. 10.2.2.2 Inductor Selection
        3. 10.2.2.3 Capacitor Selection
          1. 10.2.2.3.1 Input Capacitor
          2. 10.2.2.3.2 Output Capacitor
        4. 10.2.2.4 Setting The Output Voltage
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 器件支持
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 文档支持
      1. 13.2.1 相关文档　
    3. 13.3 接收文档更新通知
    4. 13.4 社区资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8 Specifications

8.1 Absolute Maximum Ratings

over junction temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage(2) VIN, L1, L2, EN, VINA, PFM/PWM, VOUT, FB –0.3 7 V
Input current Continuos average current into L1(3) 2.7 A
Operating junction temperature, TJ –40 125 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground pin.
(3) Maximum continuos average input current 3.5 A, under those condition do not exceed 105°C for more than 25% operating time.

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommended Operating Conditions

See (1)
MIN NOM MAX UNIT
VIN Input voltage 2.3 5.5 V
VOUT Output voltage 1 5.5 V
TA Operating ambient temperature –40 85 °C
TJ Operating virtual junction temperature –40 125 °C
(1) Refer to the Application and Implementation section for further information

8.4 Thermal Information

THERMAL METRIC(1) TPS63027 UNIT
YFF (DSBGA)
25 PINS
RθJA Junction-to-ambient thermal resistance 62.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 0.4 °C/W
RθJB Junction-to-board thermal resistance 10.4 °C/W
ψJT Junction-to-top characterization parameter 0.2 °C/W
ψJB Junction-to-board characterization parameter 10.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

8.5 Electrical Characteristics

VIN= 2.3 V to 5.5 V, TJ= –40°C to +125°C, typical values are at TA= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VIN Input voltage range 2.3 5.5 V
VIN;LOAD Minimum input voltage to turn on into full load IOUT = 2 A 2.8 V
IOUT Continuous output current(1) VIN ≥ 2.5 V, VOUT = 3.3 V 2 A
IQ Quiescent current, VIN IOUT = 0 mA, EN = VIN = 3.6 V,
VOUT = 3.3 V TJ = –40°C to +85°C, not switching (PFM Mode)		 35 70 μA
Quiescent current, VOUT IOUT = 0 mA, EN = VIN = 3.6 V,
VOUT = 3.3 V TJ = –40°C to +85°C, not switching (PFM Mode)		 12 μA
ISD Shutdown current EN = low, TJ = –40°C to +85°C 0.1 2 μA
UVLO Undervoltage lockout threshold VIN falling 1.6 1.7 2 V
Undervoltage lockout hysteresis 60 mV
Thermal shutdown Temperature rising 140 °C
Thermal shutdown hysteresis 20 °C
LOGIC SIGNALS EN, PFM/PWM
VIH High-level input voltage VIN = 2.3 V to 5.5 V 1.2 V
VIL Low-level input voltage VIN = 2.3 V to 5.5 V 0.4 V
Ilkg Input leakage current EN = GND or VIN 0.01 0.2 μA
OUTPUT
VOUT Output voltage range VIN = 3.6 V, IOUT = 100 mA 1 5.5 V
VFB Feedback regulation voltage 0.8 V
VFB Feedback voltage accuracy PWM mode –1% 1%
VFB Feedback voltage accuracy(3) PFM mode –1% 1.3% 3%
IPWM/PFM Output current to enter PFM mode VIN = 3 V; VOUT = 3.3 V 350 mA
IFB Feedback input bias current VFB = 0.8 V 10 100 nA
RDS;ON(Buck) High-side FET on-resistance VIN = 3 V, VOUT = 3.3 V 48 mΩ
Low-side FET on-resistance VIN = 3 V, VOUT = 3.3 V 56 mΩ
RDS;ON(Boost) High-side FET on-resistance VIN = 3 V, VOUT = 3.3 V 33 mΩ
Low-side FET on-resistance VIN = 3 V, VOUT = 3.3 V 56 mΩ
IIN Average input current limit(2) VIN = 3 V, VOUT = 3.3 V TJ = 65°C to 125°C 3.5 4.5 5 A
fSW Switching frequency 2.5 MHz
RON_DISC Discharge ON-resistance EN = low 120 Ω
Line regulation VIN = 2.8 V to 5.5 V, IOUT = 2 A 7.4 mV/V
Load regulation VIN= 3.6 V, IOUT = 0 A to 2 A 5 mV/A
(1) For minimum output current in a specific working point see Figure 6 and Equation 1 trough Equation 4.
(2) For variation of this parameter with Input voltage and temperature see Figure 6.
(3) Conditions: L = 1 µH, COUT = 2 × 22 µF.

8.6 Timing Requirements

VIN= 2.3 V to 5.5 V, TJ= –40°C to +125°C, typical values are at TA= 25°C (unless otherwise noted)
MIN NOM MAX UNIT
OUTPUT
tSS Soft-start time VOUT = EN = low to high, Buck mode VIN = 3.6 V, VOUT = 3.3 V, IOUT = 2 A 450 µs
VOUT = EN = low to high, Boost mode VIN = 2.8 V, VOUT = 3.3 V, IOUT = 2 A 700 µs
td Start up delay Time from when EN = high to when device starts switching 100 µs

8.7 Typical Characteristics

TPS63027 TPS63027_HS_RDSON3.gif
Figure 1. High Side FET On-Resistance vs Input Voltage
TPS63027 TPS63027_IQ.gif
Figure 2. Quiescent Current vs Input Voltage