ZHCSHS4 March   2018 TPS62243-Q1 , TPS62244-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      典型应用原理图
      2.      效率与输出电流间的关系
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout
      2. 8.3.2 Enable
      3. 8.3.3 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Soft Start
      2. 8.4.2 Power Save Mode
        1. 8.4.2.1 100% Duty Cycle Low Dropout Operation
      3. 8.4.3 Short-Circuit Protection
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Output Filter Design (Inductor and Output Capacitor)
          1. 9.2.2.1.1 Inductor Selection
          2. 9.2.2.1.2 Output Capacitor Selection
          3. 9.2.2.1.3 Input Capacitor Selection
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 第三方产品免责声明
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 Glossary
  13. 13机械、封装和可订购信息
    1. 13.1 Package Option Addendum
      1. 13.1.1 Packaging Information
      2. 13.1.2 Tape and Reel Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.5 Electrical Characteristics

TJ = -40°C to 125°C, typical values are at TJ = 25°C, unless otherwise noted. Specifications apply for condition VIN = 3.6 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
IQ Operating quiescent current IOUT = 0 mA. Pulse frequency modulation (PFM) mode enabled, device not switching 15 μA
IOUT = 0 mA. PFM mode enabled, device switching, VOUT = 1.25 V 18.5
ISD Shutdown current EN = GND, TJ = 25°C 0.1 1 μA
EN = GND 10
UVLO Undervoltage lockout threshold Falling 1.85 V
Rising 1.95
ENABLE, MODE
VIH High-level input voltage, EN 2 V ≤ VIN ≤ 6 V 1 VIN V
VIL Low-level input voltage, EN 2 V ≤ VIN ≤ 6 V, 0 0.35 V
IIN Input bias current, EN EN, MODE = GND or VIN 0.01 1 μA
POWER SWITCH
RDS(on) High-side MOSFET ON-resistance VIN = VGS = 3.6 V, TJ = 25°C 240 480 mΩ
Low-side MOSFET ON-resistance 180 380
ILIMF Forward current limit MOSFET high-side and low-side VIN = VGS = 3.6 V, 0.54 0.95 A
TSD Thermal shutdown Increasing junction temperature 140 °C
Thermal shutdown hysteresis Decreasing junction temperature 20 °C
OSCILLATOR
ƒSW Oscillator frequency 2 V ≤ VIN ≤ 6 V, PWM Mode 2 2.25 2.5 MHz
OUTPUT
VOUT Output voltage TPS62244 Q1 (fixed VOUT) 1.25 V
TPS62243 Q1 (fixed VOUT) 1.80 V
VREF Internal reference voltage 600 mV
VFB Feedback voltage PWM operation, 2 V ≤ VIN ≤ 6 V, in fixed output voltage versions VFB = VOUT, See (2) ,TJ = 25°C
–1.5% 0% 1.5%
PWM operation, 2 V ≤ VIN ≤ 6 V, in fixed output voltage versions VFB = VOUT, See (2) –1.5% 2.5%
Feedback voltage PFM mode Device in PFM mode 0%
Load regulation PWM mode –0.5 %/A
tStart up Start-up time Time from active EN to reach 95% of VOUT nominal 500 μs
tRamp VOUT ramp UP time Time to ramp from 5% to 95% of VOUT 250 μs
Ilkg Leakage current into SW pin VIN = 3.6 V, VIN = VOUT = VSW, EN = GND, TJ = 25°C(1) 0.1 1 μA
VIN = 3.6 V, VIN = VOUT = VSW, EN = GND, (1) 10
(1) The internal resistor divider network is disconnected from FB pin.
(2) For VIN = VO+ 0.6