ZHCSBQ2A April   2014  – May 2014 TPS62095

PRODUCTION DATA.  

  1. 特性
  2. 应用范围
  3. 说明
  4. 修订历史记录
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommend Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 PWM Operation
      2. 7.3.2 Low Dropout Operation (100% Duty Cycle)
      3. 7.3.3 Power Save Mode Operation
    4. 7.4 Device Functional Modes
      1. 7.4.1 Soft Startup
      2. 7.4.2 Voltage Tracking
      3. 7.4.3 Short Circuit Protection (Hiccup-Mode)
      4. 7.4.4 Output Discharge Function
      5. 7.4.5 Power Good Output
      6. 7.4.6 Undervoltage Lockout
      7. 7.4.7 Thermal Shutdown
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 2.5V to 5.5V Input, 1.8V Output Converter
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Output Filter
          2. 8.2.1.2.2 Inductor Selection
          3. 8.2.1.2.3 Input and Output Capacitor Selection
          4. 8.2.1.2.4 Setting the Output Voltage
        3. 8.2.1.3 Application Performance Curves
      2. 8.2.2 2.5V to 5.5V Input, 1.2V Output Converter
      3. 8.2.3 3.0V to 5.5V Input, 2.6V Output Converter
      4. 8.2.4 5V Input, 3.3V Output Converter
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Consideration
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方产品免责声明
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings(1)

MIN MAX UNIT
Voltage at pins(2) PVIN, AVIN, FB, SS, EN, DEF, VOS -0.3 7.0 V
SW, PG -0.3 VIN+0.3
Sink current PG 1.0 mA
Operating junction temperature -40 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground pin.

6.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) 0 2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) 0 500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommend Operating Conditions

Over operating free-air temperature range, unless otherwise noted.
MIN MAX UNIT
VIN Input voltage range 2.5 5.5 V
VPG Power good pull-up resistor voltage VIN V
VOUT Output voltage range 0.8 VIN V
IOUT Output current range 0 4.0 A
TJ Operating junction temperature -40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) RGT (16 PINS) UNIT
RθJA Junction-to-ambient thermal resistance 47 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 60
RθJB Junction-to-board thermal resistance 20
ψJT Junction-to-top characterization parameter 1.5
ψJB Junction-to-board characterization parameter 20
RθJC(bot) Junction-to-case (bottom) thermal resistance 5.3
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953

6.5 Electrical Characteristics

VIN = 3.6V, TA = –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VIN Input voltage range 2.5 5.5 V
IQIN Quiescent current Not switching, No Load, Into PVIN and AVIN 20 µA
Isd Shutdown current Into PVIN and AVIN 0.6 5 µA
UVLO Undervoltage lockout threshold VIN falling 2.1 2.2 2.3 V
Undervoltage lockout hysteresis 200 mV
Thermal shutdown Temperature rising 150 ºC
Thermal shutdown hysteresis 20 ºC
CONTROL SIGNAL EN
VH High level input voltage VIN = 2.5 V to 5.5 V 1 V
VL Low level input voltage VIN = 2.5 V to 5.5 V 0.4 V
Ilkg Input leakage current EN = VIN 10 100 nA
RPD Pull down resistance EN = Low 400
SOFT STARTUP
ISS Softstart current 6.3 7.5 8.7 µA
POWER GOOD
Vth Power good threshold Output voltage rising 93% 95% 97%
Output voltage falling 88% 90% 92%
VL Low level voltage I(sink) = 1 mA 0.4 V
Ilkg Leakage current VPG = 3.6 V 10 100 nA
POWER SWITCH
RDS(on) High side FET on-resistance ISW = 500 mA 50
Low side FET on-resistance ISW = 500 mA 40
ILIM High side FET switch current limit 4.7 5.5 6.7 A
fSW Switching frequency IOUT = 3 A 1.4 MHz
OUTPUT
VOUT Output voltage range 0.8 VIN V
RDIS Output discharge resistor EN = GND, VOUT = 1.8 V 200 Ω
VFB Feedback regulation voltage 0.8 V
Feedback voltage accuracy (1) IOUT = 1 A, PWM mode -1.4% +1.4%
IOUT = 1 mA, PFM mode, VOUT ≥ 1.8 V -1.4% +2.0%
IOUT = 1 mA, PFM mode, VOUT < 1.8 V -1.4% +2.5%
IFB Feedback input bias current VFB = 0.8 V 10 100 nA
Line regulation VOUT = 1.8 V, PWM operation 0.016 %/V
Load regulation VOUT = 1.8 V, PWM operation 0.04 %/A
(1) Conditions: L = 1 µH, COUT = 2 x 22 µF.

6.6 Typical Characteristics

D003_SLVSBD8_TPS62095.gifFigure 1. High Side FET On Resistance
D005_SLVSBD8_TPS62095.gifFigure 3. Quiescent Current
D004_SLVSBD8_TPS62095.gifFigure 2. Low Side FET On Resistance
D006_SLVSBD8_TPS62095.gifFigure 4. Shutdown Current