ZHCSAH1B November   2012  – April 2019 TPS53819A

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化应用
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Enable and Soft-Start
      2. 7.3.2  Adaptive On-Time Control
      3. 7.3.3  Zero Crossing Detection
      4. 7.3.4  Output Discharge Control
      5. 7.3.5  Low-Side Driver
      6. 7.3.6  High-Side Driver
      7. 7.3.7  Power Good
      8. 7.3.8  Current Sense and Overcurrent Protection
      9. 7.3.9  Overvoltage and Undervoltage Protection
      10. 7.3.10 Out-of-Bound Protection
      11. 7.3.11 UVLO Protection
      12. 7.3.12 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Light-Load Condition in Auto-Skip Operation (Eco-mode)
      2. 7.4.2 Forced Continuous Conduction Mode
      3. 7.4.3 D-CAP2™ Mode
    5. 7.5 Programming
      1. 7.5.1 PMBus General Descriptions
      2. 7.5.2 PMBus Slave Address Selection
      3. 7.5.3 PMBus Address Selection
      4. 7.5.4 Supported Formats
        1. 7.5.4.1 Direct Format: Write
        2. 7.5.4.2 Combined Format: Read
        3. 7.5.4.3 Stop-Separated Reads
      5. 7.5.5 Supported PMBus Commands
      6. 7.5.6 Unsupported PMBus Commands
    6. 7.6 Register Maps
      1. 7.6.1  OPERATION [01h] (R/W Byte)
      2. 7.6.2  ON_OFF_CONFIG [02h] (R/W Byte)
      3. 7.6.3  WRITE_PROTECT [10h] (R/W Byte)
      4. 7.6.4  CLEAR_FAULTS [03h] (Send Byte)
      5. 7.6.5  STORE_DEFAULT_ALL [11h] (Send Byte)
      6. 7.6.6  RESTORE_DEFAULT_ALL [12h] (Send Byte)
      7. 7.6.7  STATUS_WORD [79h] (Read Word)
      8. 7.6.8  CUSTOM_REG (MFR_SPECIFIC_00) [D0h] (R/W Byte)
      9. 7.6.9  DELAY_CONTROL (MFR_SPECIFIC_01) [D1h] (R/W Byte)
      10. 7.6.10 MODE_SOFT_START_CONFIG (MFR_SPECIFIC_02) [D2h] (R/W Byte)
      11. 7.6.11 FREQUENCY_CONFIG (MFR_SPECIFIC_03) [D3h] (R/W Byte)
      12. 7.6.12 VOUT_ADJUSTMENT (MFR_SPECIFIC_04) [D4h] (R/W Byte)
      13. 7.6.13 Output Voltage Fine Adjustment Soft Slew Rate
      14. 7.6.14 VOUT_MARGIN (MFR_SPECIFIC_05) [D5h] (R/W Byte)
      15. 7.6.15 Output Voltage Margin Adjustment Soft-Slew Rate
      16. 7.6.16 UVLO_THRESHOLD (MFR_SPECIFIC_06) [D6h]
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Custom Design With WEBENCH® Tools
        2. 8.2.2.2  Switching Frequency
        3. 8.2.2.3  Inductor (L1)
        4. 8.2.2.4  Output Capacitors (C10, C11, C12, C13, C14)
        5. 8.2.2.5  Input Capacitors (C1, C2, C3, C4, C5)
        6. 8.2.2.6  MOSFET (Q1, Q2)
        7. 8.2.2.7  VREG Bypass Capacitor (C18)
        8. 8.2.2.8  VDD Bypass Capacitor (C19)
        9. 8.2.2.9  VBST Capacitor (C7)
        10. 8.2.2.10 Snubber (C8 and R9)
        11. 8.2.2.11 Feedback Resistance, RFBH and RFBL (R17 and R18)
        12. 8.2.2.12 Overcurrent Limit (OCL) Setting Resistance (R10)
        13. 8.2.2.13 PMBus Device Address (R3 and R4)
        14. 8.2.2.14 PGOOD Pullup Resistor (R2)
        15. 8.2.2.15 SCL and SDA Pulldown Resistors (R14 and R15)
        16. 8.2.2.16 PMBus Pullup Resistors
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
        1. 11.1.1.1 使用 WEBENCH® 工具创建定制设计
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.2.2.6 MOSFET (Q1, Q2)

The TPS53819A uses two external N-channel MOSFETs. The VDS rating should be greater than the maximum input voltage and include some tolerance for ringing on the switching node. It must also be rated for the DC current. The high-side MOSFET conducts the input current and the low-side MOSFET conducts the output current. The gate drive voltage is set by the VREG voltage of 5 V typical. The gate capacitance should be reduced to minimize the current required to turn on the MOSFETs and switching losses. However it is recommended the low-side MOSFET have a higher gate capacitance to avoid unintentional shoot-through caused by the high dv/dt on the switching node during the high-side turn-on. A reduction in current also reduces power dissipation in TPS53819A. Choose a low RDS(on) to reduce conduction losses especially for the low-side MOSFET because it conducts the output current.

This design uses the CSD87350Q5D, 30-V, 40-A, NexFET power block with integrated low-side and high-side MOSFETs. This is optimized for applications with a 5 V gate drive. The typical gate to source capacitance of the high-side and low-side MOSFETs is 1341 pF and 2900 pF respectively. Using Equation 1 and Equation 2 the average drive currents are 2.7 mA and 5.9 mA. With Equation 3 the power dissipated in the driver is estimated to 42.4 mW. The RDS(on) of the high-side and low-side MOSFETs with a 5 V gate drive voltage is 5 mΩ and 2.2 mΩ respectively.

A small, 4.7-Ω resistance from R6, is added in series between DRVH and the gate of the high-side MOSFET. This slows down the turn-on time of the high-side MOSFET dv/dt and reduces rising edge ringing on the switching node to help prevent shoot-through. This value should be kept small and if it is too large it may lead to too large of a delay time in the turn-on time of the high-side switch.