ZHCSK65E November   2006  – October 2019 TPS2410 , TPS2411

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      典型应用图
  4. 4 修订历史记录
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
    1.     Pin Functions, PW
    2.     Pin Functions, RMS
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: TPS2410, 11
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Device Pins
        1. 8.3.1.1  A, C:
        2. 8.3.1.2  BYP:
        3. 8.3.1.3  FLTR:
        4. 8.3.1.4  FLTB:
        5. 8.3.1.5  GATE:
        6. 8.3.1.6  GND:
        7. 8.3.1.7  RSET:
        8. 8.3.1.8  RSVD:
        9. 8.3.1.9  STAT
        10. 8.3.1.10 UV, OV, PG:
        11. 8.3.1.11 VDD:
      2. 8.3.2 Gate Drive, Charge Pump and C(BYP)
      3. 8.3.3 Fast Comparator Input Filtering – C(FLTR)
      4. 8.3.4 UV, OV, and PG
      5. 8.3.5 Input ORing and Stat
    4. 8.4 Device Functional Modes
      1. 8.4.1 TPS2410 vs TPS2411 – MOSFET Control Methods
  9. 9 Application and Implementation
    1. 9.1 Typical Connections
      1. 9.1.1 N+1 Power Supply
      2. 9.1.2 Input ORing
    2. 9.2 Typical Application Examples
      1. 9.2.1 VDD, BYP, and Powering Options
      2. 9.2.2 Bidirectional Blocking and Protection of C
      3. 9.2.3 ORing Examples
      4. 9.2.4 Design Requirements
        1. 9.2.4.1 MOSFET Selection and R(RSET)
        2. 9.2.4.2 TPS2410 Regulation-loop Stability
      5. 9.2.5 Detailed Design Procedure
      6. 9.2.6 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Recommended Operating Range
    2. 10.2 System Design and Behavior with Transients
  11. 11Layout
    1. 11.1 Layout Considerations
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
    2. 12.2 相关链接
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)

9.2.5 Detailed Design Procedure

The following is a summarized design procedure:

  1. Choose between the TPS2410 or TPS2411, see TPS2410 vs TPS2411 – MOSFET Control Methods.
  2. Choose the VDD source. Table 2 provides a guide for where to connect VDD that covers most cases. VDD may be directly connected to the supply, but an R(VDD) / C(VDD) of 10 Ω / 0.01 μF is recommended.

    3. Table 2. VDD Connection Guide

    VA < 3 V 3 V ≤ VA  ≤ 3.5 V VA > 3.5 V
    Bias Supply > 3 V VA or Bias Supply > 3 V. VC if always > 3 V VC, VA or Bias for special configurations
  3. Noise voltage and impedance at the A pin should be kept low. C(A) may be required if there is noise on the bus, or A is not low impedance. If either of these is a concern, a C(A) of 0.01 μF or more may be required.
  4. Select C(BYP) as 2200 pF, X7R, 25-V or 50-V ceramic capacitor.
  5. If the noise and transient environment is not well known, design C(FLTR) in, then experimentally determine if it is required. Start with a 100 pF, X7R, 25-V or 50-V ceramic capacitor and adjust if necessary.
  6. Select M1 based on considerations of voltage drop, power dissipated, voltage ratings, and gate capacitance. See sections: MOSFET Selection and RSET and TPS2410 Regulation-Loop Stability.
  7. Select R(RSET) based on which MOSFET was chosen and reverse current considerations – see MOSFET Selection and RSET. If the noise and transient environment is not well known, make provision for R(RSET) even when using the TPS2410.
  8. Configure the UV and OV inputs per the desired behavior – UV, OV, and PG. Calculate the resistor dividers.
  9. Add optional interface for PG, FLTB, and STAT as desired.
  10. Make sure to connect RSVD to ground.

TPS2410 TPS2411 desg_tem_lvs727.gifFigure 16. Design Template