ZHCSK65E November   2006  – October 2019 TPS2410 , TPS2411

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      典型应用图
  4. 4 修订历史记录
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
    1.     Pin Functions, PW
    2.     Pin Functions, RMS
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: TPS2410, 11
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Device Pins
        1. 8.3.1.1  A, C:
        2. 8.3.1.2  BYP:
        3. 8.3.1.3  FLTR:
        4. 8.3.1.4  FLTB:
        5. 8.3.1.5  GATE:
        6. 8.3.1.6  GND:
        7. 8.3.1.7  RSET:
        8. 8.3.1.8  RSVD:
        9. 8.3.1.9  STAT
        10. 8.3.1.10 UV, OV, PG:
        11. 8.3.1.11 VDD:
      2. 8.3.2 Gate Drive, Charge Pump and C(BYP)
      3. 8.3.3 Fast Comparator Input Filtering – C(FLTR)
      4. 8.3.4 UV, OV, and PG
      5. 8.3.5 Input ORing and Stat
    4. 8.4 Device Functional Modes
      1. 8.4.1 TPS2410 vs TPS2411 – MOSFET Control Methods
  9. 9 Application and Implementation
    1. 9.1 Typical Connections
      1. 9.1.1 N+1 Power Supply
      2. 9.1.2 Input ORing
    2. 9.2 Typical Application Examples
      1. 9.2.1 VDD, BYP, and Powering Options
      2. 9.2.2 Bidirectional Blocking and Protection of C
      3. 9.2.3 ORing Examples
      4. 9.2.4 Design Requirements
        1. 9.2.4.1 MOSFET Selection and R(RSET)
        2. 9.2.4.2 TPS2410 Regulation-loop Stability
      5. 9.2.5 Detailed Design Procedure
      6. 9.2.6 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Recommended Operating Range
    2. 10.2 System Design and Behavior with Transients
  11. 11Layout
    1. 11.1 Layout Considerations
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
    2. 12.2 相关链接
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)

9.2.2 Bidirectional Blocking and Protection of C

The TPS2410 and TPS2411 may be used in applications where bidirectional blocking is desired. This may occur in situations where two different voltages are ORed together, and operation from the lower voltage is desired. Another important application allows isolation of a redundant unit that is generating too high an output voltage. There are two considerations, first is the selection of the VDD source, and second is protection of the C pin from excessive current. Figure 13 provides an example of this type of application.

VDD needs to have voltage applied when A is to be connected to the load. Connecting VDD to C only works when voltage on C is always present before A is connected. VDD may be connected to A, a separate supply, or have voltage from A ORed with voltage from C. OV may be used to force GATE low, even when V(A) is greater than V(C), by driving OV to a voltage between 0.6 V and less than 5.25 V.

The C pin must be protected from excessive current if V(A) can exceed V(C) by more than 5.5 V. With a single MOSFET, V(C) is never more than a diode drop lower than V(A). When V(AC) is greater than a diode drop, a small current flows out of the C pin into the load. If V(AC) exceeds 5.5 V, a current limiting circuit should be used to protect C. Figure 13 provides an example circuit. Inserting this protection circuit creates a small offset in the forward regulation and threshold voltage.

TPS2410 TPS2411 block_exmp_lvs727.gifFigure 13. Bidirectional Blocking Example