ZHCSF86C March 2016 – June 2025 TPD1E0B04
PRODUCTION DATA
| 参数 | 测试条件 | 最小值 | 典型值 | 最大值 | 单位 | ||
|---|---|---|---|---|---|---|---|
| VRWM | 反向关断电压 | IIO <10nA | -3.6 | 3.6 | V | ||
| VBRF | 击穿电压,IO 引脚至 GND | 测量值为器件瞬间回弹至 VHOLD 电压之前的最大电压 | 6.7 | V | |||
| VBRR | 击穿电压,GND 至 IO 引脚 | 测量值为器件瞬间回弹至 VHOLD 电压之前的最大电压 | -6.7 | V | |||
| VHOLD | 保持电压 | IIO = 1mA,TA = 25°C | 5 | 5.7 | 6.5 | V | |
| VCLAMP | 钳位电压 | IPP = 1A,TLP,从 IO 至 GND | 7.2 | V | |||
| IPP = 5A,TLP,从 IO 至 GND | 10.1 | ||||||
| IPP = 16A,TLP,从 IO 至 GND | 19 | ||||||
| IPP = 1A,TLP,从 GND 至 IO | 7.2 | ||||||
| IPP = 5A,TLP,从 GND 至 IO | 10.1 | ||||||
| IPP = 16A,TLP,从 GND 至 IO | 19 | ||||||
| ILEAK | 泄漏电流,IO 至 GND | VIO = ±2.5V | 10 | nA | |||
| RDYN | 动态电阻 | IO 至 GND | 1 | Ω | |||
| GND 至 IO | 1 | ||||||
| CL | 线路电容 | DPL 封装 | VIO = 0V,f = 1MHz,IO 至 GND,TA = 25°C | 0.13 | 0.15 | pF | |
| DPY 封装 | 0.15 | 0.18 | |||||