ZHCS891G April   2012  – December 2017 TPA3116D2 , TPA3118D2 , TPA3130D2

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化应用电路
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 DC Electrical Characteristics
    6. 6.6 AC Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Gain Setting and Master and Slave
      2. 7.3.2  Input Impedance
      3. 7.3.3  Startup and Shutdown Operation
      4. 7.3.4  PLIMIT Operation
      5. 7.3.5  GVDD Supply
      6. 7.3.6  BSPx AND BSNx Capacitors
      7. 7.3.7  Differential Inputs
      8. 7.3.8  Device Protection System
      9. 7.3.9  DC Detect Protection
      10. 7.3.10 Short-Circuit Protection and Automatic Recovery Feature
      11. 7.3.11 Thermal Protection
      12. 7.3.12 Device Modulation Scheme
        1. 7.3.12.1 MODSEL = GND: BD-Modulation
        2. 7.3.12.2 MODSEL = HIGH: 1SPW-modulation
      13. 7.3.13 Efficiency: LC Filter Required with the Traditional Class-D Modulation Scheme
      14. 7.3.14 Ferrite Bead Filter Considerations
      15. 7.3.15 When to Use an Output Filter for EMI Suppression
      16. 7.3.16 AM Avoidance EMI Reduction
    4. 7.4 Device Functional Modes
      1. 7.4.1 Mono Mode (PBTL)
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Select the PWM Frequency
        2. 8.2.2.2 Select the Amplifier Gain and Master/Slave Mode
        3. 8.2.2.3 Select Input Capacitance
        4. 8.2.2.4 Select Decoupling Capacitors
        5. 8.2.2.5 Select Bootstrap Capacitors
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Heat Sink Used on the EVM
  11. 11器件和文档支持
    1. 11.1 相关链接
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.3.6 BSPx AND BSNx Capacitors

The full H-bridge output stages use only NMOS transistors. Therefore, they require bootstrap capacitors for the high side of each output to turn on correctly. A 220 nF ceramic capacitor of quality X5R or better, rated for at least 16 V, must be connected from each output to its corresponding bootstrap input. (See the application circuit diagram in Figure 37.) The bootstrap capacitors connected between the BSxx pins and corresponding output function as a floating power supply for the high-side N-channel power MOSFET gate drive circuitry. During each high-side switching cycle, the bootstrap capacitors hold the gate-to-source voltage high enough to keep the high-side MOSFETs turned on.