SLOS520A August 2007 – March 2016 TPA2013D1
PRODUCTION DATA.
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
The following is a list of terms and definitions used in the boost equations found in this document.
C | Minimum boost capacitance required for a given ripple voltage on VCC. | |||
L | Boost inductor | |||
fboost | Switching frequency of the boost converter. | |||
ICC | Current pulled by the Class-D amplifier from the boost converter. | |||
IL | Average current through the boost inductor. | |||
R1 and R2 | Resistors used to set the boost voltage. | |||
VCC | Boost voltage. Generated by the boost converter. Voltage supply for the Class-D amplifier. | |||
VDD | Supply voltage to the IC. | |||
ΔIL | Ripple current through the inductor. | |||
ΔV | Ripple voltage on VCC due to capacitance. |
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.