ZHCSIT7A September   2018  – December 2018 TMUX6119

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      简化原理图
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Thermal Information
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Electrical Characteristics (Dual Supplies: ±15 V)
    6. 6.6 Switching Characteristics (Dual Supplies: ±15 V)
    7. 6.7 Electrical Characteristics (Single Supply: 12 V)
    8. 6.8 Switching Characteristics (Single Supply: 12 V)
    9. 6.9 Typical Characteristics
  7. Parameter Measurement Information
    1. 7.1 Truth Tables
  8. Detailed Description
    1. 8.1 Overview
      1. 8.1.1  On-Resistance
      2. 8.1.2  Off-Leakage Current
      3. 8.1.3  On-Leakage Current
      4. 8.1.4  Transition Time
      5. 8.1.5  Break-Before-Make Delay
      6. 8.1.6  Enable Turn-On and Enable Turn-Off Time
      7. 8.1.7  Charge Injection
      8. 8.1.8  Off Isolation
      9. 8.1.9  Channel-to-Channel Crosstalk
      10. 8.1.10 Bandwidth
      11. 8.1.11 THD + Noise
      12. 8.1.12 AC Power Supply Rejection Ratio (AC PSRR)
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Ultra-low Leakage Current
      2. 8.3.2 Ultra-low Charge Injection
      3. 8.3.3 Bidirectional and Rail-to-Rail Operation
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 术语表
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Ultra-low Charge Injection

The TMUX6119 is implemented with simple transmission gate topology, as shown in Figure 31. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed.

TMUX6119 Transmission_Gate.gifFigure 31. Transmission Gate Topology

The TMUX6119 utilizes special charge-injection cancellation circuitry that reduces the source (SA or SB)-to-drain (D) charge injection to as low as 0.19 pC at VS = 0 V, as shown in Figure 32.

TMUX6119 D007_SCDS384_QINJ.gifFigure 32. Charge Injection vs Source Voltage

The drain (D)-to-source (SA or SB) charge injection becomes important when the device is used as a demultiplexer (demux), where D becomes the input and Sx becomes the output. Figure 33 shows the drain-to-source charge injection across the full signal range.

TMUX6119 D008_SCDS384_QINJ2.gifFigure 33. Charge Injection vs Drain Voltage