ZHCSIT7A September   2018  – December 2018 TMUX6119

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      简化原理图
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Thermal Information
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Electrical Characteristics (Dual Supplies: ±15 V)
    6. 6.6 Switching Characteristics (Dual Supplies: ±15 V)
    7. 6.7 Electrical Characteristics (Single Supply: 12 V)
    8. 6.8 Switching Characteristics (Single Supply: 12 V)
    9. 6.9 Typical Characteristics
  7. Parameter Measurement Information
    1. 7.1 Truth Tables
  8. Detailed Description
    1. 8.1 Overview
      1. 8.1.1  On-Resistance
      2. 8.1.2  Off-Leakage Current
      3. 8.1.3  On-Leakage Current
      4. 8.1.4  Transition Time
      5. 8.1.5  Break-Before-Make Delay
      6. 8.1.6  Enable Turn-On and Enable Turn-Off Time
      7. 8.1.7  Charge Injection
      8. 8.1.8  Off Isolation
      9. 8.1.9  Channel-to-Channel Crosstalk
      10. 8.1.10 Bandwidth
      11. 8.1.11 THD + Noise
      12. 8.1.12 AC Power Supply Rejection Ratio (AC PSRR)
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Ultra-low Leakage Current
      2. 8.3.2 Ultra-low Charge Injection
      3. 8.3.3 Bidirectional and Rail-to-Rail Operation
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 术语表
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Charge Injection

The TMUX6119 have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QINJ. Figure 23 and Figure 24 shows the setup used to measure charge injection from source to drain and from drain to source. The charge injection is optimized for the TMUX6119 from the direction of source to drain.

TMUX6119 QINJ.gifFigure 23. Source to Drain Charge-Injection Measurement Setup
TMUX6119 QINJ2.gifFigure 24. Drain to Source Charge-Injection Measurement Setup