ZHCSLR4F december   2019  – july 2023 TMUX1308-Q1 , TMUX1309-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information: TMUX1308-Q1
    5. 7.5  Thermal Information: TMUX1309-Q1
    6. 7.6  Electrical Characteristics
    7. 7.7  Logic and Dynamic Characteristics
    8. 7.8  Timing Characteristics
    9. 7.9  Injection Current Coupling
    10. 7.10 Typical Characteristics
  9. 8 Parameter Measurement Information
    1. 8.1  On-Resistance
    2. 8.2  Off-Leakage Current
    3. 8.3  On-Leakage Current
    4. 8.4  Transition Time
    5. 8.5  Break-Before-Make
    6. 8.6  tON(EN) and tOFF(EN)
    7. 8.7  Charge Injection
    8. 8.8  Off Isolation
    9. 8.9  Crosstalk
    10. 8.10 Bandwidth
    11. 8.11 Injection Current Control
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Bidirectional Operation
      2. 9.3.2 Rail-to-Rail Operation
      3. 9.3.3 1.8 V Logic Compatible Inputs
      4. 9.3.4 Fail-Safe Logic
      5. 9.3.5 Injection Current Control
        1. 9.3.5.1 TMUX13xx-Q1 is Powered, Channel is Unselected, and the Input Signal is Greater Than VDD (VDD = 5 V, VINPUT = 5.5 V)
        2. 9.3.5.2 TMUX13xx-Q1 is Powered, Channel is Selected, and the Input Signal is Greater Than VDD (VDD = 5 V, VINPUT = 5.5 V)
        3. 9.3.5.3 TMUX13xx-Q1 is Unpowered and the Input Signal has a Voltage Present (VDD = 0 V, VINPUT = 3 V)
    4. 9.4 Device Functional Modes
    5. 9.5 Truth Tables
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Short To Battery Protection
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Mechanical, Packaging, and Orderable Information

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10.3 Power Supply Recommendations

The TMUX1308-Q1 and TMUX1309-Q1 devices operate across a wide supply range of 1.62 V to 5.5 V. Note: do not exceed the absolute maximum ratings because stresses beyond the listed ratings can cause permanent damage to the devices.

Power-supply bypassing improves noise margin and prevents switching noise propagation from the VDD supply to other components. Good power-supply decoupling is important to achieve optimum performance. For improved supply noise immunity, use a supply decoupling capacitor ranging from 0.1 μF to 10 μF from VDD to ground. Place the bypass capacitors as close to the power supply pins of the device as possible using low-impedance connections. TI recommends using multi-layer ceramic chip capacitors (MLCCs) that offer low equivalent series resistance (ESR) and inductance (ESL) characteristics for power-supply decoupling purposes. For very sensitive systems, or for systems in harsh noise environments, avoiding the use of vias for connecting the capacitors to the device pins may offer superior noise immunity. The use of multiple vias in parallel lowers the overall inductance and is beneficial for connections to ground planes.