ZHCSK56A August   2019  – July 2020 TMUX1208-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics (VDD = 5 V ±10 %)
    6. 6.6 Electrical Characteristics (VDD = 3.3 V ±10 %)
    7. 6.7 Electrical Characteristics (VDD = 1.8 V ±10 %)
    8. 6.8 Electrical Characteristics (VDD = 1.2 V ±10 %)
  7. 7 Parameter Measurement Information
    1. 7.1  On-Resistance
    2. 7.2  Off-Leakage Current
    3. 7.3  On-Leakage Current
    4. 7.4  Transition Time
    5. 7.5  Break-Before-Make
    6. 7.6  tON(EN) and tOFF(EN)
    7. 7.7  Charge Injection
    8. 7.8  Off Isolation
    9. 7.9  Crosstalk
    10. 7.10 Bandwidth
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Rail to Rail Operation
      3. 8.3.3 1.8 V Logic Compatible Inputs
      4. 8.3.4 Fail-Safe Logic
      5. 8.3.5 Device Functional Modes
      6. 8.3.6 Truth Tables
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Layout Information
      2. 10.1.2 41
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
  12. 12Electrostatic Discharge Caution
  13. 13Glossary

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.7 Charge Injection

The TMUX1208-Q1 has a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 7-7 shows the setup used to measure charge injection from source (Sx) to drain (D).

GUID-D6959ED2-993C-482F-96A7-6F50E306C7F8-low.gifFigure 7-7 Charge-Injection Measurement Setup