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  • TMUX111x 5V 低漏电流、1:1 (SPST)、4 通道精密开关

    • ZHCSJE1C February   2019  – December 2023 TMUX1111 , TMUX1112 , TMUX1113

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  • TMUX111x 5V 低漏电流、1:1 (SPST)、4 通道精密开关
  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics (VDD = 5V ±10 %)
    6. 6.6 Electrical Characteristics (VDD = 3.3V ±10 %)
    7. 6.7 Electrical Characteristics (VDD = 1.8V ±10 %)
    8. 6.8 Electrical Characteristics (VDD = 1.2V ±10 %)
    9. 6.9 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 On-resistance
    2. 7.2 Off-leakage current
    3. 7.3 On-leakage current
    4. 7.4 Transition time
    5. 7.5 Break-before-make
    6. 7.6 Charge injection
    7. 7.7 Off isolation
    8. 7.8 Channel-to-Channel Crosstalk
    9. 7.9 Bandwidth
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional operation
      2. 8.3.2 Rail to rail operation
      3. 8.3.3 1.8V Logic compatible inputs
      4. 8.3.4 Fail-safe logic
      5. 8.3.5 Ultra-Low Leakage Current
      6. 8.3.6 Ultra-Low Charge Injection
    4. 8.4 Device Functional Modes
    5. 8.5 Truth Tables
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application - Sample-and-Hold Circuit
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Typical Application - Switched Gain Amplifier
      1. 9.3.1 Design Requirements
      2. 9.3.2 Detailed Design Procedure
      3. 9.3.3 Application Curve
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
  14. 重要声明

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • PW|16
  • RSV|16
散热焊盘机械数据 (封装 | 引脚)
  • RSV|16
    • QFND836
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Data Sheet

TMUX111x 5V 低漏电流、1:1 (SPST)、4 通道精密开关

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

  • 宽电源电压范围：1.08V 至 5.5V
  • 低漏电流：3pA
  • 低电荷注入：-1.5pC
  • 低导通电阻：2Ω
  • 工作温度范围：-40°C 至 +125°C
  • 兼容 1.8V 逻辑电平
  • 失效防护逻辑
  • 轨到轨运行
  • 双向信号路径
  • 先断后合开关
  • ESD 保护 HBM：2000V

2 应用

  • 采样保持电路
  • 反馈增益开关
  • 信号隔离
  • 现场变送器
  • 可编程逻辑控制器 (PLC)
  • 工厂自动化和控制
  • 超声波扫描仪
  • 患者监护和诊断
  • 心电图 (ECG)
  • 数据采集系统 (DAQ)
  • ATE 测试设备
  • 电池测试设备
  • 仪表：实验室、分析、便携
  • 智能仪表：水表和燃气表
  • 光纤网络
  • 光学测试设备

3 说明

TMUX1111、TMUX1112 和 TMUX1113 是精密互补金属氧化物半导体 (CMOS) 器件，具有四个独立的可选 1:1、单极单投 (SPST) 开关。1.08V 至 5.5V 的宽工作电源电压范围使其适用于从医疗设备到工业系统的各种应用。该器件可在源极 (Sx) 和漏极 (Dx) 引脚上支持从 GND 到 VDD 范围的双向模拟和数字信号。

TMUX1111 的开关可通过逻辑 0 在恰当的逻辑控制输入下打开，而要打开 TMUX1112 中的开关，则需逻辑 1。TMUX1113 的四个通道通过两个支持逻辑 0 的开关分开，而另外两个开关则支持逻辑 1。TMUX1113 具有先断后合开关，因此该器件可用于交叉点开关应用。

TMUX111x 器件是精密开关和多路复用器器件系列中的一部分。此类器件具有非常低的导通和关断漏电流以及较低的电荷注入，因此可用于高精度测量应用。8nA 的低电源电流和小型封装选项使其可用于便携式应用。

器件信息
器件型号(1)

控制逻辑(1)

封装(2)
TMUX1111

低电平有效

PW（TSSOP，16）
RSV（UQFN，16）

TMUX1112

高电平有效

TMUX1113

混合

(1) 请参阅器件比较。
(2) 有关更多信息，请参阅节 12。
GUID-B4B4C50E-613D-4F2A-997B-D0F679F305ED-low.gifTMUX111x 方框图

4 Device Comparison Table

PRODUCT DESCRIPTION
TMUX1111 Low-Leakage-Current, Precision, 4-Channel, 1:1 (SPST) Switches (Normally Closed)
TMUX1112 Low-Leakage-Current, Precision, 4-Channel, 1:1 (SPST) Switches (Normally Open)
TMUX1113 Low-Leakage-Current, Precision, 4-Channel, 1:1 (SPST) Switches (Dual Open + Dual Closed)

5 Pin Configuration and Functions

GUID-269D4F6A-63C2-499D-ADBA-D549EC920133-low.svgFigure 5-1 PW Package, 16-Pin TSSOP (Top View)
GUID-2B5D1018-9513-43DB-AE17-9F71CADAAEE4-low.svgFigure 5-2 RSV Package, 16-Pin UQFN (Top View)
Table 5-1 Pin Functions
PIN TYPE(1) DESCRIPTION
NAME TSSOP UQFN
SEL1 1 15 I Logic control input 1. Controls channel 1 state as shown in Section 8.5.
D1 2 16 I/O Drain pin 1. Can be an input or output.
S1 3 1 I/O Source pin 1. Can be an input or output.
N.C. 4 2 — No internal connection.
GND 5 3 P Ground (0 V) reference
S4 6 4 I/O Source pin 4. Can be an input or output.
D4 7 5 I/O Drain pin 4. Can be an input or output.
SEL4 8 6 I Logic control input 4. Controls channel 4 state as shown in Section 8.5.
SEL3 9 7 I Logic control input 3. Controls channel 3 state as shown in Section 8.5.
D3 10 8 I/O Drain pin 3. Can be an input or output.
S3 11 9 I/O Source pin 3. Can be an input or output.
N.C. 12 10 — No internal connection.
VDD 13 11 P Positive power supply. This pin is the most positive power-supply potential. For reliable operation, connect a decoupling capacitor ranging from 0.1 µF to 10 µF between VDD and GND.
S2 14 12 I/O Source pin 2. Can be an input or output.
D2 15 13 I/O Drain pin 2. Can be an input or output.
SEL2 16 14 I Logic control input 2. Controls channel 2 state as shown in Section 8.5.
(1) I = input, O = output, I/O = input and output, P = power

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1) (2) (3)
MIN MAX UNIT
VDD Supply voltage –0.5 6 V
VSEL Logic control input pin voltage (SELx) –0.5 6 V
ISEL Logic control input pin current (SELx) –30 30 mA
VS or VD Source or drain voltage (Sx, Dx) –0.5 VDD+0.5 V
IS or ID (CONT) Source or drain continuous current (Sx, Dx) IDC ± 10 %(4) IDC ± 10 %(4) mA
IS or ID (PEAK) Source and drain peak current: (1 ms period max, 10% duty cycle maximum) (Sx, D) Ipeak ± 10 %(4) Ipeak ± 10 %(4) mA
Tstg Storage temperature –65 150 °C
Ptot Total power dissipation(5)(6) 500 mW
TJ Junction temperature 150 °C
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(3) All voltages are with respect to ground, unless otherwise specified.
(4) Refer to Recommended Operating Conditions for IDC and IPeak ratings.
(5) For PW package: Ptot derates linearly above TA=88°C by 8.08mW/°C    
(6) For QFN package: Ptot derates linearly above TA=76°C by 6.81mW/°C

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101 or ANSI/ESDA/JEDEC JS-002, all pins(2) ±750
(1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VDD Positive power supply voltage 1.08 5.5 V
VS or VD Signal path input/output voltage (source or drain pin) (Sx, Dx) 0 VDD V
VSEL Logic control input pin voltage (SELx) 0 5.5 V
TA Ambient temperature –40 125 °C
IDC Continuous current through switch Tj = 25°C 150 mA
Tj = 85°C 120 mA
Tj = 125°C 60 mA
Tj = 130°C 50 mA
Ipeak Peak current through switch(1 ms period max, 10% duty cycle maximum) Tj = 25°C 300 mA
Tj = 85°C 300 mA
Tj = 125°C 180 mA
Tj = 130°C 160 mA

6.4 Thermal Information

THERMAL METRIC(1) TMUX1111 / TMUX1112 / TMUX1113 UNIT
PW (TSSOP) RSV (QFN)
16 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 124.7 146.8  °C/W
RθJC(top) Junction-to-case (top) thermal resistance 54.8 83.5 °C/W
RθJB Junction-to-board thermal resistance 70.9 75.5 °C/W
ΨJT Junction-to-top characterization parameter 10.8 9.0 °C/W
ΨJB Junction-to-board characterization parameter 70.3 73.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics (VDD = 5V ±10 %)

at TA = 25°C, VDD = 5V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0V to VDD
ISD = 10mA
Refer to On-resistance		 25°C   2 4 Ω
–40°C to +85°C     4.5 Ω
–40°C to +125°C     4.9 Ω
ΔRON On-resistance matching between channels VS = 0V to VDD
ISD = 10mA
Refer to On-resistance		 25°C   0.13 Ω
–40°C to +85°C   0.4 Ω
–40°C to +125°C   0.5 Ω
RON FLAT On-resistance flatness VS = 0V to VDD
ISD = 10mA
Refer to On-resistance		 25°C   0.85 Ω
–40°C to +85°C   1.6 Ω
–40°C to +125°C   1.6 Ω
IS(OFF) Source off leakage current(1) VDD = 5V
Switch Off
VD = 4.5V / 1.5V
VS = 1.5V / 4.5V
Refer to Off-leakage current		 25°C –0.08 ±0.005 0.08 nA
–40°C to +85°C –0.3 0.3 nA
–40°C to +125°C –0.9 0.9 nA
ID(OFF) Drain off leakage current(1) VDD = 5V
Switch Off
VD = 4.5V / 1.5V
VS = 1.5V / 4.5V
Refer to Off-leakage current		 25°C –0.08 ±0.005 0.08 nA
–40°C to +85°C –0.3 0.3 nA
–40°C to +125°C –0.9 0.9 nA
ID(ON)
IS(ON)		 Channel on leakage current VDD = 5V
Switch On
VD = VS = 2.5V
Refer to On-leakage current		 25°C –0.025 ±0.003 0.025 nA
–40°C to +85°C –0.2 0.2 nA
–40°C to +125°C –0.95 0.95 nA
ID(ON)
IS(ON)		 Channel on leakage current VDD = 5V
Switch On
VD = VS = 4.5V / 1.5V
Refer to On-leakage current		 25°C –0.1 ±0.01 0.1 nA
–40°C to +85°C –0.35 0.35 nA
–40°C to +125°C –2 2 nA
LOGIC INPUTS (SELx)
VIH Input logic high  –40°C to +125°C 1.49   5.5 V
VIL Input logic low  –40°C to +125°C 0   0.87 V
IIH
IIL		 Input leakage current 25°C   ±0.005   µA
IIH
IIL		 Input leakage current –40°C to +125°C     ±0.06 µA
CIN Logic input capacitance 25°C   1 pF
CIN Logic input capacitance –40°C to +125°C   2 pF
POWER SUPPLY
IDD VDD supply current Logic inputs = 0V or 5.5V 25°C   0.008   µA
–40°C to +125°C     1 µA
DYNAMIC CHARACTERISTICS
tTRAN Transition time between channels VS = 3V
RL = 200 Ω, CL = 15pF
Refer to Transition time		 25°C   12   ns
–40°C to +85°C     18 ns
–40°C to +125°C     19 ns
tOPEN (BBM) Break before make time
(TMUX1113 Only)		 VS = 3V
RL = 200 Ω, CL = 15pF
Refer to Break-before-make		 25°C   8   ns
–40°C to +85°C 1     ns
–40°C to +125°C 1     ns
QC Charge Injection VS = 1V
RS = 0 Ω, CL = 1nF
Refer to Charge injection		 25°C –1.5 pC
OISO Off Isolation RL = 50 Ω, CL = 5pF
f = 1MHz
Refer to Off isolation		 25°C   –62   dB
RL = 50 Ω, CL = 5pF
f = 10MHz
Refer to Off isolation		 25°C   –40   dB
XTALK Crosstalk RL = 50 Ω, CL = 5pF
f = 1MHz
Refer to Channel-to Channel Crosstalk		 25°C   –100   dB
RL = 50 Ω, CL = 5pF
f = 10MHz
Refer to Channel-to Channel Crosstalk		 25°C   –90   dB
BW Bandwidth RL = 50 Ω, CL = 5pF
Refer to Bandwidth		 25°C   300   MHz
CSOFF Source off capacitance f = 1MHz 25°C   7   pF
CDOFF Drain off capacitance f = 1MHz 25°C   10   pF
CSON
CDON		 On capacitance f = 1MHz 25°C   17   pF
(1) When VS is 4.5V, VD is 1.5V or when VS is 1.5V, VD is 4.5V.

6.6 Electrical Characteristics (VDD = 3.3V ±10 %)

at TA = 25°C, VDD = 3.3V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0V to VDD
ISD = 10mA
Refer to On-resistance		 25°C 3.7 8.8 Ω
–40°C to +85°C 9.5 Ω
–40°C to +125°C 9.8 Ω
ΔRON On-resistance matching between channels VS = 0V to VDD
ISD = 10mA
Refer to On-resistance		 25°C 0.13 Ω
–40°C to +85°C 0.4 Ω
–40°C to +125°C 0.5 Ω
RON FLAT On-resistance flatness VS = 0V to VDD
ISD = 10mA
Refer to On-resistance		 25°C 1.9 Ω
–40°C to +85°C 2 Ω
–40°C to +125°C 2.2 Ω
IS(OFF) Source off leakage current(1) VDD = 3.3V
Switch Off
VD = 3V / 1V
VS = 1V / 3V
Refer to Off-leakage current		 25°C –0.05 ±0.001 0.05 nA
–40°C to +85°C –0.2 0.2 nA
–40°C to +125°C –0.9 0.9 nA
ID(OFF) Drain off leakage current(1) VDD = 3.3V
Switch Off
VD = 3V / 1V
VS = 1V / 3V
Refer to Off-leakage current		 25°C –0.05 ±0.001 0.05 nA
–40°C to +85°C –0.2 0.2 nA
–40°C to +125°C –0.9 0.9 nA
ID(ON)
IS(ON)		 Channel on leakage current VDD = 3.3V
Switch On
VD = VS = 3V / 1V
Refer to On-leakage current		 25°C –0.1 ±0.005 0.1 nA
–40°C to +85°C –0.35 0.35 nA
–40°C to +125°C –2 2 nA
LOGIC INPUTS (SELx)
VIH Input logic high  –40°C to +125°C 1.35 5.5 V
VIL Input logic low –40°C to +125°C 0 0.8 V
IIH
IIL		 Input leakage current 25°C   ±0.005   µA
IIH
IIL		 Input leakage current –40°C to +125°C     ±0.05 µA
CIN Logic input capacitance 25°C   1 pF
CIN Logic input capacitance –40°C to +125°C   2 pF
POWER SUPPLY
IDD VDD supply current Logic inputs = 0V or 5.5V 25°C 0.005 µA
–40°C to +125°C 1 µA
DYNAMIC CHARACTERISTICS
tTRAN Transition time between channels VS = 2V
RL = 200 Ω, CL = 15pF
Refer to Transition time		 25°C   14 ns
–40°C to +85°C     20 ns
–40°C to +125°C     22 ns
tOPEN (BBM) Break before make time
(TMUX1113 Only)		 VS = 2V
RL = 200 Ω, CL = 15pF
Refer to Break-before-make		 25°C   9 ns
–40°C to +85°C 1   ns
–40°C to +125°C 1   ns
QC Charge Injection VS = 1V
RS = 0 Ω, CL = 1nF
Refer to Charge injection		 25°C   –1.5   pC
OISO Off Isolation RL = 50 Ω, CL = 5pF
f = 1MHz
Refer to Off isolation		 25°C   –62   dB
RL = 50 Ω, CL = 5pF
f = 10MHz
Refer to Off Isolation		 25°C   –40   dB
XTALK Crosstalk RL = 50 Ω, CL = 5pF
f = 1MHz
Refer to Channel-to-Channel Crosstalk		 25°C   –100   dB
RL = 50 Ω, CL = 5pF
f = 10MHz
Refer to Channel-to-Channel Crosstalk		 25°C   –90   dB
BW Bandwidth RL = 50 Ω, CL = 5pF
Refer to Bandwidth		 25°C   300   MHz
CSOFF Source off capacitance f = 1MHz 25°C   7   pF
CDOFF Drain off capacitance f = 1MHz 25°C   10   pF
CSON
CDON		 On capacitance f = 1MHz 25°C   17   pF
(1) When VS is 3V, VD is 1V or when VS is 1V, VD is 3V.

6.7 Electrical Characteristics (VDD = 1.8V ±10 %)

at TA = 25°C, VDD = 1.8V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0V to VDD
ISD = 10mA
Refer to On-resistance		 25°C 40 Ω
–40°C to +85°C 80 Ω
–40°C to +125°C 80 Ω
ΔRON On-resistance matching between channels VS = 0V to VDD
ISD = 10mA
Refer to On-resistance		 25°C 0.4 Ω
–40°C to +85°C 1.5 Ω
–40°C to +125°C 1.5 Ω
IS(OFF) Source off leakage current(1) VDD = 1.98V
Switch Off
VD = 1.62V / 1V
VS = 1V / 1.62V
Refer to Off-leakage current		 25°C –0.05 ±0.001 0.05 nA
–40°C to +85°C –0.2 0.2 nA
–40°C to +125°C –0.9 0.9 nA
ID(OFF) Drain off leakage current(1) VDD = 1.98V
Switch Off
VD = 1.62V / 1V
VS = 1V / 1.62V
Refer to Off-leakage current		 25°C –0.05 ±0.001 0.05 nA
–40°C to +85°C –0.2 0.2 nA
–40°C to +125°C –0.9 0.9 nA
ID(ON)
IS(ON)		 Channel on leakage current VDD = 1.98V
Switch On
VD = VS = 1.62V / 1V
Refer to On-leakage current		 25°C –0.1 ±0.005 0.1 nA
–40°C to +85°C –0.35 0.35 nA
–40°C to +125°C –2 2 nA
LOGIC INPUTS (SELx)
VIH Input logic high –40°C to +125°C 1.07 5.5 V
VIL Input logic low –40°C to +125°C 0 0.68 V
IIH
IIL		 Input leakage current 25°C   ±0.005   µA
IIH
IIL		 Input leakage current –40°C to +125°C     ±0.05 µA
CIN Logic input capacitance 25°C   1 pF
CIN Logic input capacitance –40°C to +125°C   2 pF
POWER SUPPLY
IDD VDD supply current Logic inputs = 0V or 5.5V 25°C 0.001   µA
–40°C to +125°C   0.85 µA
DYNAMIC CHARACTERISTICS
tTRAN Transition time between channels VS = 1V
RL = 200 Ω, CL = 15pF
Refer to Transition time		 25°C   25 ns
–40°C to +85°C   44 ns
–40°C to +125°C     44 ns
tOPEN (BBM) Break before make time
(TMUX1113 Only)		 VS = 1V
RL = 200 Ω, CL = 15pF
Refer to Break-before-make		 25°C   17 ns
–40°C to +85°C 1     ns
–40°C to +125°C 1     ns
QC Charge Injection VS = 1V
RS = 0 Ω, CL = 1nF
Refer to Charge injection		 25°C   –0.5   pC
OISO Off Isolation RL = 50 Ω, CL = 5pF
f = 1MHz
Refer to Off isolation		 25°C   –62   dB
RL = 50 Ω, CL = 5pF
f = 10MHz
Refer to Off isolation		 25°C   –40   dB
XTALK Crosstalk RL = 50 Ω, CL = 5pF
f = 1MHz
Refer to Channel-to-Channel Crosstalk		 25°C   –100   dB
RL = 50 Ω, CL = 5pF
f = 10MHz
Refer to Channel-to-Channel Crosstalk		 25°C   –90   dB
BW Bandwidth RL = 50 Ω, CL = 5pF
Refer to Bandwidth		 25°C   300   MHz
CSOFF Source off capacitance f = 1MHz 25°C   7   pF
CDOFF Drain off capacitance f = 1MHz 25°C   10   pF
CSON
CDON		 On capacitance f = 1MHz 25°C   17   pF
(1) When VS is 1.62V, VD is 1V or when VS is 1V, VD is 1.62V.

6.8 Electrical Characteristics (VDD = 1.2V ±10 %)

PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0V to VDD
ISD = 10mA
Refer to On-resistance		 25°C 70 Ω
–40°C to +85°C 105 Ω
–40°C to +125°C 105 Ω
ΔRON On-resistance matching between channels VS = 0V to VDD
ISD = 10mA
Refer to On-resistance		 25°C 0.4 Ω
–40°C to +85°C 1.5 Ω
–40°C to +125°C 1.5 Ω
IS(OFF) Source off leakage current(1) VDD = 1.32V
Switch Off
VD = 1V / 0.8V
VS = 0.8V / 1V
Refer to Off-leakage current		 25°C –0.05 ±0.001 0.05 nA
–40°C to +85°C –0.2 0.2 nA
–40°C to +125°C –0.9 0.9 nA
ID(OFF) Drain off leakage current(1) VDD = 1.32V
Switch Off
VD = 1V / 0.8V
VS = 0.8V / 1V
Refer to Off-leakage current		 25°C –0.05 ±0.001 0.05 nA
–40°C to +85°C –0.2 0.2 nA
–40°C to +125°C –0.9 0.9 nA
ID(ON)
IS(ON)		 Channel on leakage current VDD = 1.32V
Switch On
VD = VS = 1V / 0.8V
Refer to On-leakage current		 25°C –0.1 ±0.005 0.1 nA
–40°C to +85°C –0.35 0.35 nA
–40°C to +125°C –2 2 nA
LOGIC INPUTS (SELx)
VIH Input logic high  –40°C to +125°C 0.96 5.5 V
VIL Input logic low –40°C to +125°C 0 0.36 V
IIH
IIL		 Input leakage current 25°C ±0.005   µA
IIH
IIL		 Input leakage current –40°C to +125°C   ±0.05 µA
CIN Logic input capacitance 25°C   1   pF
CIN Logic input capacitance –40°C to +125°C     2 pF
POWER SUPPLY
IDD VDD supply current Logic inputs = 0V or 5.5V 25°C 0.001   µA
–40°C to +125°C   0.7 µA
DYNAMIC CHARACTERISTICS
tTRAN Transition time between channels VS = 1V
RL = 200 Ω, CL = 15pF
Refer to Transition time		 25°C   55 ns
–40°C to +85°C   190 ns
–40°C to +125°C     190 ns
tOPEN (BBM) Break before make time
(TMUX1113 Only)		 VS = 1V
RL = 200 Ω, CL = 15pF
Refer to Break-before-make		 25°C   28 ns
–40°C to +85°C 1     ns
–40°C to +125°C 1     ns
QC Charge Injection VS = 1V
RS = 0 Ω, CL = 1nF
Refer to Charge injection		 25°C   –0.5   pC
OISO Off Isolation RL = 50 Ω, CL = 5pF
f = 1MHz
Refer to Off isolation		 25°C   –62   dB
RL = 50 Ω, CL = 5pF
f = 10MHz
Refer to Off isolation		 25°C   –40   dB
XTALK Crosstalk RL = 50 Ω, CL = 5pF
f = 1MHz
Refer to Channel-to-Channel Crosstalk		 25°C   –100   dB
RL = 50 Ω, CL = 5pF
f = 10MHz
Refer to Channel-to-Channel Crosstalk		 25°C   –90   dB
BW Bandwidth RL = 50 Ω, CL = 5pF
Refer to Bandwidth		 25°C   300   MHz
CSOFF Source off capacitance f = 1MHz 25°C   8   pF
CDOFF Drain off capacitance f = 1MHz 25°C   11   pF
CSON
CDON		 On capacitance f = 1MHz 25°C   18   pF
(1) When VS is 1V, VD is 0.8V or when VS is 0.8V, VD is 1V.

 
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