ZHCS038G february   2011  – june 2023 TLV707 , TLV707P

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Internal Current Limit
      2. 7.3.2 Shutdown
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input and Output Capacitor Requirements
        2. 8.2.2.2 Dropout Voltage
        3. 8.2.2.3 Transient Response
      3. 8.2.3 Application Curves
    3. 8.3 Best Design Practices
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
        1. 8.5.1.1 Board Layout Recommendations to Improve PSRR and Noise Performance
        2. 8.5.1.2 Package Mounting
        3. 8.5.1.3 Thermal Considerations
        4. 8.5.1.4 Power Dissipation
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 Evaluation Modules
        2. 9.1.1.2 Spice Models
      2. 9.1.2 Device Nomenclature
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 接收文档更新通知
    4. 9.4 支持资源
    5. 9.5 Trademarks
    6. 9.6 静电放电警告
    7. 9.7 术语表
  11. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 Revision History

Changes from Revision F (May 2018) to Revision G (June 2023)

  • 向文档中添加了 TLV707xxA 信息Go
  • Added TLV707xxA information to V(DO) and ICL parameters in Electrical Characteristics table Go
  • Added TLV707xxA information to Device Nomenclature sectionGo

Changes from Revision E (February 2016) to Revision F (May 2018)

  • Changed V(ESD) HBM value from ±2000 V to ±4000 V in ESD Ratings tableGo