ZHCSI82E May   2018  – May 2019 THVD1410 , THVD1450 , THVD1451 , THVD1452

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      THVD1410 和 THVD1450 简化原理图
      2.      THVD1451 简化原理图
      3.      THVD1452 简化原理图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
    2.     Pin Functions
    3.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  ESD Ratings [IEC]
    4. 7.4  Recommended Operating Conditions
    5. 7.5  Thermal Information
    6. 7.6  Power Dissipation
    7. 7.7  Electrical Characteristics
    8. 7.8  Switching Characteristics
    9. 7.9  Typical Characteristics: All Devices
    10. 7.10 Typical Characteristics: THD1450, THVD1451 and THVD1452
    11. 7.11 Typical Characteristics: THVD1410
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagrams
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
      1. 9.4.1 Device Functional Modes for THVD1410 and THVD1450
      2. 9.4.2 Device Functional Modes for THVD1451
      3. 9.4.3 Device Functional Modes for THVD1452
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
        1. 10.2.1.1 Data Rate and Bus Length
        2. 10.2.1.2 Stub Length
        3. 10.2.1.3 Bus Loading
        4. 10.2.1.4 Receiver Failsafe
        5. 10.2.1.5 Transient Protection
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 器件支持
    2. 13.2 第三方产品免责声明
    3. 13.3 相关链接
    4. 13.4 接收文档更新通知
    5. 13.5 社区资源
    6. 13.6 商标
    7. 13.7 静电放电警告
    8. 13.8 Glossary
  14. 14机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • D|8
  • DGK|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

10.2.1.5 Transient Protection

The bus pins of the THVD14xx transceiver family include on-chip ESD protection against ±30-kV HBM and ±18-kV IEC 61000-4-2 contact discharge. The International Electrotechnical Commission (IEC) ESD test is far more severe than the HBM ESD test. The 50% higher charge capacitance, C(S), and 78% lower discharge resistance, R(D), of the IEC model produce significantly higher discharge currents than the HBM model. As stated in the IEC 61000-4-2 standard, contact discharge is the preferred transient protection test method.

THVD1410 THVD1450 THVD1451 THVD1452 HBM_app_sllsei9.gifFigure 34. HBM and IEC ESD Models and Currents in Comparison (HBM Values in Parenthesis)

The on-chip implementation of IEC ESD protection significantly increases the robustness of equipment. Common discharge events occur because of human contact with connectors and cables. Designers may choose to implement protection against longer duration transients, typically referred to as surge transients.

EFTs are generally caused by relay-contact bounce or the interruption of inductive loads. Surge transients often result from lightning strikes (direct strike or an indirect strike which induce voltages and currents), or the switching of power systems, including load changes and short circuit switching. These transients are often encountered in industrial environments, such as factory automation and power-grid systems.

Figure 35 compares the pulse-power of the EFT and surge transients with the power caused by an IEC ESD transient. The left hand diagram shows the relative pulse-power for a 0.5-kV surge transient and 4-kV EFT transient, both of which dwarf the 10-kV ESD transient visible in the lower-left corner. 500-V surge transients are representative of events that may occur in factory environments in industrial and process automation.

The right hand diagram shows the pulse power of a 6-kV surge transient, relative to the same 0.5-kV surge transient. 6-kV surge transients are most likely to occur in power generation and power-grid systems.

THVD1410 THVD1450 THVD1451 THVD1452 power_comp_sllsei9.gifFigure 35. Power Comparison of ESD, EFT, and Surge Transients

If the surge transients, high-energy content is characterized by long pulse duration and slow decaying pulse power. The electrical energy of a transient that is dumped into the internal protection cells of a transceiver is converted into thermal energy, which heats and destroys the protection cells, thus destroying the transceiver. Figure 36 shows the large differences in transient energies for single ESD, EFT, surge transients, and an EFT pulse train that is commonly applied during compliance testing.

THVD1410 THVD1450 THVD1451 THVD1452 comp_trans_sllsei9.gifFigure 36. Comparison of Transient Energies