SCAS218X January   1993  – January 2015 SN74LVC245A

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Thermal Information
    4. 6.4 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DGV|20
  • DB|20
  • NS|20
  • N|20
  • DW|20
  • PW|20
  • RGY|20
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage range –0.5 6.5 V
VI Input voltage range(2) –0.5 6.5 V
VO Voltage range applied to any output in the high-impedance or power-off state(2) –0.5 6.5 V
VO Voltage range applied to any output in the high or low state(2)(3) –0.5 VCC + 0.5 V
IIK Input clamp current VI < 0 –50 mA
IOK Output clamp current VO < 0 –50 mA
IO Continuous output current ±50 mA
Continuous current through VCC or GND ±100 mA
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.
(3) The value of VCC is provided in the Recommended Operating Conditions table.

6.2 ESD Ratings

PARAMETER DEFINITION VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) 2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) 1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)
TA = 25°C –40°C TO 85°C –40°C TO 125°C UNIT
MIN MAX MIN MAX MIN MAX
VCC Supply voltage Operating 1.65 3.6 1.65 3.6 1.65 3.6 V
Data retention only 1.5 1.5 1.5
VIH High-level input voltage VCC = 1.65 V to 1.95 V 0.65 × VCC 0.65 × VCC 0.65 × VCC V
VCC = 2.3 V to 2.7 V 1.7 1.7 1.7
VCC = 2.7 V to 3.6 V 2 2 2
VIL Low-level input voltage VCC = 1.65 V to 1.95 V 0.35 × VCC 0.35 × VCC 0.35 × VCC V
VCC = 2.3 V to 2.7 V 0.7 0.7 0.7
VCC = 2.7 V to 3.6 V 0.8 0.8 0.8
VI Input voltage 0 5.5 0 5.5 0 5.5 V
VO Output voltage 0 VCC 0 VCC 0 VCC V
IOH High-level output current VCC = 1.65 V –4 –4 –4 mA
VCC = 2.3 V –8 –8 –8
VCC = 2.7 V –12 –12 –12
VCC = 3 V –24 –24 –24
IOL Low-level output current VCC = 1.65 V 4 4 4 mA
VCC = 2.3 V 8 8 8
VCC = 2.7 V 12 12 12
VCC = 3 V 24 24 24
Δt/Δv Input transition rise or fall rate 10 10 10 ns/V
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004.

6.3 Thermal Information

THERMAL METRIC(1) SN74LVC245A UNIT
DB(2) DGV(2) DW(2) GQN or ZQN(2) N(2) NS(2) PW(2) RGY(3)
20 PINS
RθJA Junction-to-ambient thermal resistance 106.5 124.1 92.9 78 59.2 83.6 108.1 44.0 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 68.1 39.5 60.6 44.9 49.4 43.0 53.0
RθJB Junction-to-board thermal resistance 61.7 65.5 60.4 40.1 51.2 59.1 22.1
ψJT Junction-to-top characterization parameter 28.5 2.1 28.2 29.9 21.9 4.7 3.0
ψJB Junction-to-board characterization parameter 61.2 64.9 60.0 39.9 50.8 58.6 22.2
RθJC(bot) Junction-to-case(bottom) thermal resistance — — — — — — 16.6
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The package thermal impedance is calculated in accordance with JESD 51-7.
(3) The package thermal impedance is calculated in accordance with JESD 51-5.

Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC TA = 25°C –40°C TO 85°C –40°C TO 125°C UNIT
MIN TYP MAX MIN MAX MIN MAX
VOH IOH = –100 μA 1.65 V to
3.6 V		 VCC – 0.2 VCC – 0.2 VCC – 0.2 V
IOH = –4 mA 1.65 V 1.29 1.2 1.1
IOH = –8 mA 2.3 V 1.9 1.7 1.6
IOH = –12 mA 2.7 V 2.2 2.2 2.1
3 V 2.4 2.4 2.3
IOH = –24 mA 3 V 2.3 2.2 2.1
VOL IOL = 100 μA 1.65 V to
3.6 V		 0.1 0.2 0.2 V
IOL = 4 mA 1.65 V 0.24 0.45 0.60
IOL = 8 mA 2.3 V 0.3 0.7 0.75
IOL = 12 mA 2.7 V 0.4 0.4 0.6
IOL = 24 mA 3 V 0.55 0.55 0.75
II Control
inputs		 VI = 0 to 5.5 V 3.6 V ±1 ±5 ±10 μA
Ioff VI or VO = 5.5 V 0 ±1 ±10 ±20 μA
IOZ(1) VO = 0 to 5.5 V 3.6 V ±1 ±10 ±20 μA
ICC VI = VCC or GND IO = 0 3.6 V 1 10 30 μA
3.6 V ≤ VI ≤ 5.5 V(2) 1 10 30
ΔICC One input at VCC – 0.6 V,
Other inputs at VCC or GND		 2.7 V to
3.6 V		 500 500 5000 μA
Ci Control inputs VI = VCC or GND 3.3 V 4 pF
Cio A or B ports(3) VI = VCC or GND 3.3 V 5.5 pF
(1) All typical values are at VCC = 3.3 V, TA = 25 C.
(2) This applies in the disabled state only.
(3) For I/O ports, the parameter Ioz includes the input leakage current.

Switching Characteristics

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 VCC TA = 25°C –40°C TO 85°C –40°C TO 125°C UNIT
MIN TYP MAX MIN MAX MIN MAX
tpd A or B B or A 1.8 V ± 0.15 V 1 6 12.2 1 12.7 1 13.7 ns
2.5 V ± 0.2 V 1 3.9 7.8 1 8.3 1 9.1
2.7 V 1 4.2 7.1 1 7.3 1 8.3
3.3 V ± 0.3 V 1.5 3.8 6.1 1.5 6.3 1.5 7.3
ten OE A or B 1.8 V ± 0.15 V 1 7 14.8 1 15.3 1 16.8 ns
2.5 V ± 0.2 V 1 4.5 10 1 10.5 1 12
2.7 V 1 5.4 9.3 1 9.5 1 11
3.3 V ± 0.3 V 1.5 4.4 8.3 1.5 8.5 1.5 10
tdis OE A or B 1.8 V ± 0.15 V 1 7.8 16.5 1 17 1 18 ns
2.5 V ± 0.2 V 1 4 9 1 9.5 1 10.5
2.7 V 1 4.4 8.3 1 8.5 1 9.5
3.3 V ± 0.3 V 1.7 4.1 7.3 1.7 7.5 1.7 8.5
tsk(o) 3.3 V ± 0.3 V 1 1.5 ns

Operating Characteristics

TA = 25°C
PARAMETER TEST
CONDITIONS		 VCC TYP UNIT
Cpd Power dissipation capacitance per transceiver Outputs enabled f = 10 MHz 1.8 V 42 pF
2.5 V 43
3.3 V 45
Outputs disabled 1.8 V 1
2.5 V 1
3.3 V 2

6.4 Typical Characteristics

graph_5a_scas414.gifFigure 1. Propagation Delay (Low to High Transition)
vs Load Capacitance
graph_5b_scas414.gifFigure 2. Propagation Delay (High to Low Transition)
vs Load Capacitance