SLLS575A AUGUST   2003  – July 2015 SN65LVDS049

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Device Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Dissipation Rating
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Driver Offset
      2. 8.3.2 Receiver Open Circuit Fail-Safe
      3. 8.3.3 Receiver Common-Mode Range
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Point-to-Point Communications
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1  Bypass Capacitance
          2. 9.2.1.2.2  Driver Supply Voltage
          3. 9.2.1.2.3  Driver Input Voltage
          4. 9.2.1.2.4  Driver Output Voltage
          5. 9.2.1.2.5  Interconnecting Media
          6. 9.2.1.2.6  PCB Transmission Lines
          7. 9.2.1.2.7  Termination Resistor
          8. 9.2.1.2.8  Receiver Supply Voltage
          9. 9.2.1.2.9  Receiver Input Common-Mode Range
          10. 9.2.1.2.10 Receiver Input Signal
          11. 9.2.1.2.11 Receiver Output Signal
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Multidrop Communications
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Interconnecting Media
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Microstrip vs. Stripline Topologies
      2. 11.1.2 Dielectric Type and Board Construction
      3. 11.1.3 Recommended Stack Layout
      4. 11.1.4 Separation Between Traces
      5. 11.1.5 Crosstalk and Ground Bounce Minimization
      6. 11.1.6 Decoupling
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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订购信息

12 Device and Documentation Support

12.1 Device Support

12.1.1 Development Support

For the IBIS model, see the SN65LVDS049 product folder, www.ti.com/product/SN65LVDS049.

12.2 Documentation Support

12.2.1 Related Documentation

For related documentation see the following:

  • Control-Impedance Transmission Lines (SNLA187)
  • Microstrip vs Stripline Topologies (SLLD009)

12.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

12.4 Trademarks

E2E is a trademark of Texas Instruments.

Rogers is a trademark of Rogers Corporation.

All other trademarks are the property of their respective owners.

12.5 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

12.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.