ZHCSOE2C November   2005  – July 2021 SN65C3221E

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  ESD Ratings - IEC Specifications
    4. 7.4  Recommended Operating Conditions
    5. 7.5  Thermal Information
    6. 7.6  Electrical Characteristics
    7. 7.7  Driver Section: Electrical Characteristics
    8. 7.8  Switching Characteristics: Driver
    9. 7.9  Receiver Section: Electrical Characteristics
    10. 7.10 Switching Characteristics: Receiver
    11. 7.11 Auto-powerdown Section: Electrical Characteristics
    12. 7.12 Switching Characteristics: Auto-powerdown
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
  11. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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7.8 Switching Characteristics: Driver

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 10-1)
PARAMETER TEST CONDITIONS(1) MIN TYP(2) MAX UNIT
Maximum data rate
(see Figure 8-1)		 RL = 3 kΩ CL = 1000 pF 250 kbit/s
CL = 250 pF, VCC = 3 V to 4.5 V 1000
CL = 1000 pF, VCC = 4.5 V to 5.5 V 1000
tsk(p) Pulse skew(3) CL = 150 pF to 2500 pF, RL = 3 kΩ to 7 kΩ, See Figure 8-2 100 ns
SR(tr) Slew rate,
transition region
(see Figure 8-1)		 VCC = 3.3 V, RL = 3 kΩ to 7 kΩ, CL = 150 pF to 1000 pF 18 150 V/μs
(1) Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.
(2) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(3) Pulse skew is defined as |tPLH - tPHL| of each channel of the same device.