ZHCSOE1F April   2002  – July 2021 SN65C3221 , SN75C3221

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions (1)
      1. 6.3.1 Thermal Information
    4. 6.4  Electrical Characteristics
    5. 6.5  Electrical Characteristics - Driver
    6. 6.6  Switching Characteristics - Driver
    7. 6.7  Electrical Characteristics - Receiver
    8. 6.8  Switching Characteristics - Receiver
    9. 6.9  Electrical Characteristics - Auto-Powerdown
    10. 6.10 Switching Characteristics - Auto-Powerdown
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
  10. 10Device and Documentation Support
    1. 10.1 接收文档更新通知
    2. 10.2 支持资源
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 术语表
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • PW|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.6 Switching Characteristics - Driver

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(3) (see Figure 9-1)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
Maximum data rate
(see Figure 7-1)		 RL = 3 kΩ CL = 1000 pF 250 kbit/s
CL = 250 pF, VCC = 3 V to 4.5 V 1000
CL = 1000 pF, VCC = 4.5 V to 5.5 V 1000
tsk(p) Pulse skew(2) CL = 150 pF to 2500 pF RL = 3 kΩ to 7 kΩ, See Figure 7-2 100 ns
SR(tr)

Slew rate,
transition region
(see Figure 7-1)

VCC = 3.3 V,

RL = 3 kΩ to 7 kΩ

 CL = 150 pF to 1000 pF 18 150 V/μs
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Pulse skew is defined as |tPLH − tPHL| of each channel of the same device.
(3) Test conditions are C1−C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2−C4 = 0.33 μF at VCC = 5 V ± 0.5 V.