ZHCSOE1F April   2002  – July 2021 SN65C3221 , SN75C3221

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions (1)
      1. 6.3.1 Thermal Information
    4. 6.4  Electrical Characteristics
    5. 6.5  Electrical Characteristics - Driver
    6. 6.6  Switching Characteristics - Driver
    7. 6.7  Electrical Characteristics - Receiver
    8. 6.8  Switching Characteristics - Receiver
    9. 6.9  Electrical Characteristics - Auto-Powerdown
    10. 6.10 Switching Characteristics - Auto-Powerdown
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
  10. 10Device and Documentation Support
    1. 10.1 接收文档更新通知
    2. 10.2 支持资源
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 术语表
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • PW|16
  • DB|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics - Driver

over recommended ranges of supply voltage and operating free-air temperature range (unless otherwise noted)(3) (see Figure 9-1)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VOH High-level output voltage DOUT at RL = 3 kΩ to GND, DIN = GND 5 5.4 V
VOL Low-level output voltage DOUT at RL = 3 kΩ to GND, DIN = VCC −5 −5.4 V
IIH High-level input current VI = VCC ±0.01 ±1 μA
IIL Low-level input current VI at GND ±0.01 ±1 μA
IOS Short-circuit output current(2) VCC = 3.6 V, VO = 0 V ±35 ±60 mA
VCC = 5.5 V, VO = 0 V ±35 ±90
ro Output resistance VCC, V+, and V− = 0 V, VO = ±2 V 300 10M Ω
Ioff Output leakage current FORCEOFF = GND VO = ±12 V, VCC = 3 V to 3.6 V ±25 μA
VO = ±10 V, VCC = 4.5 V to 5.5 V ±25
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one output should be shorted at a time.
(3) Test conditions are C1−C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2−C4 = 0.33 μF at VCC = 5 V ± 0.5 V.