ZHCSND7 September   2022 SN6507-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics, SN6507-Q1
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Push-Pull Converter
      2. 8.3.2 Core Magnetization
      3. 8.3.3 Duty Cycle Control
      4.      Programmable Switching Frequency
      5. 8.3.4 Spread Spectrum Clocking
      6. 8.3.5 Slew Rate Control
      7. 8.3.6 Protection Features
        1. 8.3.6.1 Over Voltage Protection (OVP)
        2. 8.3.6.2 Over Current and Short Circuit Protection (OCP)
        3. 8.3.6.3 Under Voltage Lock-Out (UVLO)
        4. 8.3.6.4 Thermal Shut Down (TSD)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Start-Up Mode
        1. 8.4.1.1 Soft-Start
      2. 8.4.2 Operation Mode
      3. 8.4.3 Shutdown Mode
      4. 8.4.4 SYNC Mode
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Pin Configuration
        2. 9.2.2.2 LDO Selection
        3. 9.2.2.3 Diode Selection
        4. 9.2.2.4 Capacitor and Inductor Selection
        5. 9.2.2.5 Transformer Selection
          1. 9.2.2.5.1 V-t Product Calculation
          2. 9.2.2.5.2 Turns Ratio Estimate
        6. 9.2.2.6 Low-Emissions Designs
      3. 9.2.3 Application Curves
      4. 9.2.4 System Examples
        1. 9.2.4.1 Higher Output Voltage Designs
        2. 9.2.4.2 Commercially-Available Transformers
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Community Resources
    4. 10.4 Trademarks
  11. 11Mechanical, Packaging, and Orderable Information

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Thermal Shut Down (TSD)

Thermal shutdown prevents the device from reaching extreme junction temperatures by turning off the internal switches when the IC junction temperature exceeds 180°C (typical). In TSD, the switching stops immediately to prevent the internal MOSFETs from failing in either high ambient temperature operation conditions or due to self-heating from high switching current. To recover from thermal shut down condition, the junction temperature must be below the overtemperature protection falling threshold. When the junction temperature falls below 147°C (typical), the power FET switching is enabled.