ZHCSMN4 February   2021 OPA858-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input and ESD Protection
      2. 8.3.2 Feedback Pin
      3. 8.3.3 Wide Gain-Bandwidth Product
      4. 8.3.4 Slew Rate and Output Stage
      5. 8.3.5 Current Noise
    4. 8.4 Device Functional Modes
      1. 8.4.1 Split-Supply and Single-Supply Operation
      2. 8.4.2 Power-Down Mode
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Using the OPA858-Q1 as a Transimpedance Amplifier
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 静电放电警告
    7. 12.7 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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Current Noise

The input impedance of CMOS and JFET input amplifiers at low frequencies exceed several GΩs. However, at higher frequencies, the transistors parasitic capacitance to the drain, source, and substrate reduces the impedance. The high impedance at low frequencies eliminates any bias current and the associated shot noise. At higher frequencies, the input current noise increases (see Figure 8-8) as a result of capacitive coupling between the CMOS gate oxide and the underlying transistor channel. This phenomenon is a natural artifact of the construction of the transistor and is unavoidable.

GUID-8C211E82-D48E-4D23-B2DE-CBF0CF62762C-low.gifFigure 8-8 Input Current Noise (IBN and IBI) vs Frequency