ZHCSMN3B February   2021  – January 2023 OPA855-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Thermal Information
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Input and ESD Protection
      2. 9.3.2 Feedback Pin
      3. 9.3.3 Wide Gain-Bandwidth Product
      4. 9.3.4 Slew Rate and Output Stage
    4. 9.4 Device Functional Modes
      1. 9.4.1 Split-Supply and Single-Supply Operation
      2. 9.4.2 Power-Down Mode
  10. 10Application, Implementation, and Layout
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
    3. 10.3 Typical Application
      1. 10.3.1 Design Requirements
      2. 10.3.2 Detailed Design Procedure
      3. 10.3.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 支持资源
    5. 13.5 Trademarks
    6. 13.6 静电放电警告
    7. 13.7 术语表
  14. 14Mechanical, Packaging, and Orderable Information

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9.3.1 Input and ESD Protection

The OPA855-Q1 is fabricated on a low-voltage, high-speed, BiCMOS process. The internal, junction breakdown voltages are low for these small geometry devices, and as a result, all device pins are protected with internal ESD protection diodes to the power supplies as Figure 9-3 shows. There are two antiparallel diodes between the inputs of the amplifier that clamp the inputs during an overrange or fault condition.

GUID-9B9B0A8D-B619-430C-A5DF-B720765BEA87-low.gifFigure 9-3 Internal ESD Structure