ZHCSQG1H November   2009  – May 2022 LMP8645 , LMP8645HV

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 2.7-V Electrical Characteristics
    6. 6.6 5-V Electrical Characteristics
    7. 6.7 12-V Electrical Characteristics
    8. 6.8 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
      1. 7.1.1 Theory of Operation
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Driving ADC
      2. 7.3.2 Applying Input Voltage With No Supply Voltage
    4. 7.4 Device Functional Modes
      1. 7.4.1 Selection of the Gain Resistor
      2. 7.4.2 Gain Range Limitations
        1. 7.4.2.1 Range 1: VCM is –2 V to 1.8 V
        2. 7.4.2.2 Range 2: VCM is 1.8 V to VS
        3. 7.4.2.3 Range 3: VCM is greater than VS
      3. 7.4.3 Selection of Sense Resistor
        1. 7.4.3.1 Resistor Power Rating and Thermal Issues
        2. 7.4.3.2 Using PCB Trace as a Sense Resistor
      4. 7.4.4 Sense Line Inputs
        1. 7.4.4.1 Effects of Series Resistance on Sense Lines
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Typical Current Monitor Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 High Brightness LED Driver
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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订购信息

2.7-V Electrical Characteristics

Unless otherwise specified, all limits specified for at TA = 25°C, VS = V+ – V, V+ = 2.7 V, V = 0 V, −2 V < VCM < 76 V, RG = 25 kΩ, RL = 10 MΩ.(1)
PARAMETERTEST CONDITIONSMIN(3)TYP(2)MAX(3)UNIT
VOSInput Offset VoltageVCM = 2.1 V–11mV
At the temperature extremes–1.71.7
TCVOSInput Offset Voltage Drift(4) (6)VCM = 2.1 V7μV/°C
IBInput Bias Current(7)VCM = 2.1 V1220μA
eniInput Voltage Noise(6)f > 10 kHz, RG = 5 kΩ120nV/√ Hz
VSENSE(MAX)Max Input Sense Voltage(6)VCM = 12 V, RG = 5 kΩ600mV
Gain AVAdjustable Gain Setting(6)VCM = 12 V1100V/V
GmTransconductanceVCM = 2.1 V200µA/V
AccuracyVCM = 2.1 V–2%2%
At the temperature extremes–3.4%3.4%
Gm drift(6)−40°C to 125°C, VCM = 2.1 V140ppm /°C
PSRRPower Supply Rejection RatioVCM = 2.1 V, 2.7 V < V+ < 12 V90dB
CMRRCommon-Mode Rejection RatioLMP8645HV 2.1 V < VCM < 76 V
LMP8645 2.1 V < VCM< 42 V
95dB
–2 V <VCM < 2 V60
BW−3-dB Bandwidth(6)RG = 10 kΩ, CG = 4 pF VSENSE = 400 mV,
CL = 30 pF , RL = 1 MΩ
990kHz
RG = 25 kΩ, CG = 4 pF, VSENSE = 200 mV,
CL = 30 pF, RL = 1 MΩ
260
Rg = 50 kΩ, CG = 4 pF, VSENSE = 100 mV,
CL = 30 pF, RL = 1 MΩ
135
SRSlew Rate(5)(6)VCM = 5 V, CG = 4 pF, VSENSE from 25 mV
to 175 mV, CL = 30 pF, RL = 1 MΩ
0.5V/µs
ISSupply CurrentVCM = 2.1 V380525uA
At the temperature extremes710
VCM = –2 V20002500
At the temperature extremes2700
VOUTMaximum Output VoltageVCM = 2.1 V, Rg = 500 kΩ1.2V
Minimum Output VoltageVCM = 2.1 V20mV
IOUTOutput current(6)Sourcing, VOUT = 600 mV, Rg = 150 kΩ5mA
Sinking, VOUT = 600 mV, Rg = 150 kΩ5
CLOADMax Output Capacitance Load(6)30pF
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA.
Typical values represent the most likely parametric norm at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
All limits are specified by testing, design, or statistical analysis.
Offset voltage temperature drift is determined by dividing the change in VOS at the temperature extremes by the total temperature change.
The number specified is the average of rising and falling slew rates and measured at 90% to 10%.
This parameter is specified by design and/or characterization and is not tested in production.
Positive Bias Current corresponds to current flowing into the device.