ZHCSP13A september   2021  – june 2023 LMK1D1204P

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. Device Comparison
  7. Pin Configuration and Functions
  8. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  9. Parameter Measurement Information
  10. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Fail-Safe Input
    4. 9.4 Device Functional Modes
      1. 9.4.1 LVDS Output Termination
      2. 9.4.2 Input Termination
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Examples
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 静电放电警告
    5. 11.5 术语表
  13. 12Mechanical, Packaging, and Orderable Information

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Electrical Characteristics

VDD = 1.8 V ± 5 %, –40°C ≤ TA ≤ 105°C. Typical values are at VDD = 1.8 V, 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY CHARACTERISTICS
IDDSTAT LMK1D1204P All-outputs enabled and unterminated, f = 0 Hz (1) 50 mA
IDD100M LMK1D1204P All-outputs enabled, RL = 100 Ω, f =100 MHz 60 72 mA
 INPUT CHARACTERISTICS (Applies to VDD = 1.8 V ± 5%, 2.5 V ± 5% and 3.3 V ± 5%)
VdI3 3-state input Open 0.4 × VCC V
VIH Input high voltage Minimum input voltage for a logical "1" state 0.7 × VCC VCC + 0.3 V
VIL Input low voltage Maximum input voltage for a logical "0" state –0.3 0.3 × VCC V
IIH Input high current VDD can be 1.8V/2.5V/3.3V with VIH = VDD 30 µA
IIL Input low current VDD can be 1.8V/2.5V/3.3V with VIH = VDD –30 µA
Rpull-up(EN) Input pullup resistor 500
Rpull-down(EN) Input pulldown resistor 320
SINGLE-ENDED LVCMOS/LVTTL CLOCK INPUT (Applies to VDD = 1.8 V ± 5%, 2.5 V ± 5% and 3.3 V ± 5%)
fIN Input frequency Clock input DC 250 MHz
VIN_S-E Single-ended Input Voltage Swing Assumes a square wave input with two levels 0.4 3.465 V
dVIN/dt Input Slew Rate (20% to 80% of the amplitude) 0.05 V/ns
IIH Input high current VDD = 3.465 V, VIH = 3.465 V 50 µA
IIL Input low current VDD = 3.465 V, VIL = 0 V –30 µA
CIN_SE Input capacitance at 25°C 3.5 pF
DIFFERENTIAL CLOCK INPUT (Applies to VDD = 1.8 V ± 5%, 2.5 V ± 5% and 3.3 V ± 5%)
fIN Input frequency Clock input 2 GHz
VIN,DIFF(p-p) Differential input voltage peak-to-peak {2*(VINP-VINN)} VICM = 1 V (VDD = 1.8 V) 0.3 2.4 VPP
VICM = 1.25 V (VDD = 2.5 V/3.3 V) 0.3 2.4
VICM Input common mode voltage VIN,DIFF(P-P) > 0.4 V (VDD = 1.8 V/2.5/3.3 V) 0.25 2.3 V
IIH Input high current VDD = 3.465 V, VINP = 2.4 V, VINN = 1.2 V 30 µA
IIL Input low current VDD = 3.465 V, VINP = 0 V, VINN = 1.2 V –30 µA
CIN_S-E Input capacitance (Single-ended) at 25°C 3.5  pF
LVDS DC OUTPUT CHARACTERISTICS
|VOD| Differential output voltage magnitude |VOUTP - VOUTN| VIN,DIFF(P-P) = 0.3 V, RLOAD = 100 Ω 250 350 450 mV
ΔVOD Change in differential output voltage magnitude. Per output, defined as the difference between VOD in logic hi/lo states. VIN,DIFF(P-P) = 0.3 V, RLOAD = 100 Ω –15 15 mV
VOC(SS) Steady-state common mode output voltage VIN,DIFF(P-P) = 0.3 V, RLOAD = 100 Ω (VDD = 1.8 V) 1 1.2 V
VIN,DIFF(P-P) = 0.3 V, RLOAD = 100 Ω (VDD = 2.5 V/3.3 V) 1.1 1.375
ΔVOC(SS) Change in steady-state common mode output voltage. Per output, defined as the difference in VOC in logic hi/lo states. VIN,DIFF(P-P) = 0.3 V, RLOAD = 100 Ω –15 15 mV
LVDS AC OUTPUT CHARACTERISTICS
Vring Output overshoot and undershoot VIN,DIFF(P-P) = 0.3 V, RLOAD = 100 Ω, fOUT = 491.52 MHz –0.1 0.1 VOD
VOS Output AC common mode VIN,DIFF(P-P) = 0.3 V, RLOAD = 100 Ω  50 100 mVpp
IOS Short-circuit output current (differential) VOUTP = VOUTN –12 12 mA
IOS(cm) Short-circuit output current (common-mode) VOUTP = VOUTN = 0 –24 24 mA
tPD Propagation delay VIN,DIFF(P-P) = 0.3 V, RLOAD = 100 Ω (2) 0.3 0.575 ns
tSK, O Output skew Skew between outputs with the same load conditions 20 ps
tSK, PP Part-to-part skew Skew between outputs on different parts subjected to the same operating conditions with the same input and output loading. 250 ps
tSK, P Pulse skew 50% duty cycle input, crossing point-to-crossing-point distortion (4) –20 20 ps
tRJIT(ADD) Random additive Jitter (rms) fIN = 156.25 MHz with 50% duty-cycle, Input slew rate = 1.5V/ns, Integration range = 12 kHz – 20 MHz, with output load RLOAD = 100 Ω  50 60 fs, RMS
Phase noise Phase Noise for a carrier frequency of 156.25 MHz with 50% duty-cycle, Input slew rate = 1.5V/ns with output load RLOAD = 100 Ω PN1kHz  –143 dBc/Hz
PN10kHz  –152
PN100kHz –157
PN1MHz  –160
PNfloor  –164
MUXISO Mux Isolation fIN = 156.25 MHz. The difference in power level at fIN when the selected clock is active and the unselected clock is static versus when the selected clock is inactive and the unselected clock is active. 80 dB
ODC Output duty cycle With 50% duty cycle input 45 55 %
tR/tF Output rise and fall time 20% to 80% with RLOAD = 100 Ω 300 ps
VAC_REF Reference output voltage VDD = 2.5 V, ILOAD = 100 µA 0.9 1.25 1.375 V
POWER SUPPLY NOISE REJECTION (PSNR) VDD = 2.5 V/ 3.3 V
PSNR Power Supply Noise Rejection (fcarrier = 156.25 MHz) 10 kHz, 100 mVpp ripple injected on VDD –70 dBc
1 MHz, 100 mVpp ripple injected on VDD –50
A typical 4-mA current reduction per disabled output can be expected.
Measured between single-ended/differential input crossing point to the differential output crossing point.
Defined as the magnitude of the time difference between the high-to-low and low-to-high propagation delay times at an output.