ZHCSH72I September   2011  – December 2017 LMK00301

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      功能框图
      2.      LVPECL 输出摆幅 (VOD) 与频率间的关系
  4. 修订历史记录
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Parameter Measurement Information
    1. 8.1 Differential Voltage Measurement Terminology
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
      1. 9.2.1 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 VCC and VCCO Power Supplies
      2. 9.3.2 Clock Inputs
      3. 9.3.3 Clock Outputs
        1. 9.3.3.1 Reference Output
  10. 10Application and Implementation
    1. 10.1 Driving the Clock Inputs
    2. 10.2 Crystal Interface
    3. 10.3 Termination and Use of Clock Drivers
      1. 10.3.1 Termination for DC Coupled Differential Operation
      2. 10.3.2 Termination for AC Coupled Differential Operation
      3. 10.3.3 Termination for Single-Ended Operation
  11. 11Power Supply Recommendations
    1. 11.1 Power Supply Sequencing
    2. 11.2 Current Consumption and Power Dissipation Calculations
      1. 11.2.1 Power Dissipation Example #1: Separate Vcc and Vcco Supplies with Unused Outputs
      2. 11.2.2 Power Dissipation Example #2: Worst-Case Dissipation
    3. 11.3 Power Supply Bypassing
      1. 11.3.1 Power Supply Ripple Rejection
    4. 11.4 Thermal Management
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 社区资源
    3. 12.3 商标
    4. 12.4 静电放电警告
    5. 12.5 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Crystal Interface

The LMK00301 has an integrated crystal oscillator circuit that supports a fundamental mode, AT-cut crystal. The crystal interface is shown in Figure 28.

LMK00301 30147009.gifFigure 28. Crystal Interface

The load capacitance (CL) is specific to the crystal, but usually on the order of 18 - 20 pF. While CL is specified for the crystal, the OSCin input capacitance (CIN = 4 pF typical) of the device and PCB stray capacitance (CSTRAY ~ 1~3 pF) can affect the discrete load capacitor values, C1 and C2.

For the parallel resonant circuit, the discrete capacitor values can be calculated as follows:

Equation 1. CL = (C1 * C2) / (C1 + C2) + CIN + CSTRAY

Typically, C1 = C2 for optimum symmetry, so Equation 1 can be rewritten in terms of C1 only:

Equation 2. CL = C12 / (2 * C1) + CIN + CSTRAY

Finally, solve for C1:

Equation 3. C1 = (CL – CIN – CSTRAY)*2

Electrical Characteristics provides crystal interface specifications with conditions that ensure start-up of the crystal, but it does not specify crystal power dissipation. The designer will need to ensure the crystal power dissipation does not exceed the maximum drive level specified by the crystal manufacturer. Overdriving the crystal can cause premature aging, frequency shift, and eventual failure. Drive level should be held at a sufficient level necessary to start-up and maintain steady-state operation.

The power dissipated in the crystal, PXTAL, can be computed by:

Equation 4. PXTAL = IRMS2 * RESR*(1 + C0/CL)2

where

  • IRMS is the RMS current through the crystal.
  • RESR is the max. equivalent series resistance specified for the crystal
  • CL is the load capacitance specified for the crystal
  • C0 is the min. shunt capacitance specified for the crystal

IRMS can be measured using a current probe (e.g. Tektronix CT-6 or equivalent) placed on the leg of the crystal connected to OSCout with the oscillation circuit active.

As shown in Figure 28, an external resistor, RLIM, can be used to limit the crystal drive level, if necessary. If the power dissipated in the selected crystal is higher than the drive level specified for the crystal with RLIM shorted, then a larger resistor value is mandatory to avoid overdriving the crystal. However, if the power dissipated in the crystal is less than the drive level with RLIM shorted, then a zero value for RLIM can be used. As a starting point, a suggested value for RLIM is 1.5 kΩ.