ZHCSH86B December   2017  – February 2019 LMH5401-SP

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      LMH5401-SP 小信号频率响应
      2.      LMH5401-SP 驱动 ADC12D1620QML
  4. 4 修订历史记录
  5. 5 说明 （续）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: VS = 5 V
    6. 7.6 Electrical Characteristics: VS = 3.3 V
    7. 7.7 Typical Characteristics: 5 V
    8. 7.8 Typical Characteristics: 3.3 V
  8. 8 Parameter Measurement Information
    1. 8.1  Output Reference Nodes and Gain Nomenclature
    2. 8.2  ATE Testing and DC Measurements
    3. 8.3  Frequency Response
    4. 8.4  S-Parameters
    5. 8.5  Frequency Response with Capacitive Load
    6. 8.6  Distortion
    7. 8.7  Noise Figure
    8. 8.8  Pulse Response, Slew Rate, and Overdrive Recovery
    9. 8.9  Power Down
    10. 8.10 VCM Frequency Response
    11. 8.11 Test Schematics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Fully-Differential Amplifier
      2. 9.3.2 Operations for Single-Ended to Differential Signals
        1. 9.3.2.1 AC-Coupled Signal Path Considerations for Single-Ended Input to Differential Output Conversion
        2. 9.3.2.2 DC-Coupled Input Signal Path Considerations for SE-DE Conversions
        3. 9.3.2.3 Resistor Design Equations for Single-to-Differential Applications
        4. 9.3.2.4 Input Impedance Calculations
      3. 9.3.3 Differential-to-Differential Signals
        1. 9.3.3.1 AC-Coupled, Differential-Input to Differential-Output Design Issues
        2. 9.3.3.2 DC-Coupled, Differential-Input to Differential-Output Design Issues
      4. 9.3.4 Output Common-Mode Voltage
    4. 9.4 Device Functional Modes
      1. 9.4.1 Operation With a Split Supply
      2. 9.4.2 Operation With a Single Supply
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Stability, Noise Gain, and Signal Gain
      2. 10.1.2 Input and Output Headroom Considerations
      3. 10.1.3 Noise Analysis
      4. 10.1.4 Noise Figure
      5. 10.1.5 Thermal Considerations
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Driving Matched Loads
        2. 10.2.2.2 Driving Unmatched Loads For Lower Loss
        3. 10.2.2.3 Driving Capacitive Loads
        4. 10.2.2.4 Driving ADCs
          1. 10.2.2.4.1 SNR Considerations
          2. 10.2.2.4.2 SFDR Considerations
          3. 10.2.2.4.3 ADC Input Common-Mode Voltage Considerations—AC-Coupled Input
          4. 10.2.2.4.4 ADC Input Common-Mode Voltage Considerations—DC-Coupled Input
        5. 10.2.2.5 GSPS ADC Driver
        6. 10.2.2.6 Common-Mode Voltage Correction
        7. 10.2.2.7 Active Balun
      3. 10.2.3 Application Curves
    3. 10.3 Do's and Don'ts
      1. 10.3.1 Do:
      2. 10.3.2 Don't:
  11. 11Power Supply Recommendations
    1. 11.1 Supply Voltage
    2. 11.2 Single Supply
    3. 11.3 Split Supply
    4. 11.4 Supply Decoupling
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 器件支持
      1. 13.1.1 器件命名规则
    2. 13.2 文档支持
      1. 13.2.1 相关文档
    3. 13.3 接收文档更新通知
    4. 13.4 社区资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 术语表
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

1 特性

  • QMLV（QML V 类）已通过 MIL-PRF-38535 认证，SMD 5962R1721401VXC
    • 耐辐射加固保障 (RHA) 能力高达 100krad (Si) 总电离剂量 (TID)
    • 单粒子闩锁 (SEL) 对于
      LET 的抗扰度 = 85MeV-cm2/mg
    • 支持军用级温度范围（-55°C 至 125°C）
  • 增益带宽积 (GBP)：6.5GHz
  • 优异的线性性能：
    直流电频率达 2GHz
  • 压摆率：17,500V/µs
  • 低 HD2、HD3 失真
    （500mVPP，100Ω，SE-DE，Gv = 17dB）(1)：
    • 100MHz：HD2 为 -91dBc，HD3 为 -95dBc
    • 200MHz：HD2 为 -86dBc，HD3 为 -85dBc
    • 500MHz：HD2 为 -80dBc，HD3 为 -80dBc
    • 1GHz：HD2 为 -53dBc，HD3 为 -70dBc
    • 2GHz：HD2 为 -68dBc，HD3 为 -56dBc
  • 低 IMD2、IMD3 失真
    （1VPP，100Ω，SE-DE，Gv = 17dB）(1)：
    • 500MHz：IMD2 为 –90dBc，IMD3 为 –79dBc
    • 1GHz：IMD2 为 –80dBc，IMD3 为 –61dBc
    • 2GHz：IMD2 为 –64dBc，IMD3 为 –42dBc
  • 高 OIP2、OIP3。Gp = 8dB(1)
    • 500MHz：OIP2 为 91dBm，OIP3 为 47.7dBm
    • 1 GHz：OIP2 为 80dBm，OIP3 为 37.5dBm
  • 输入电压噪声：1.25nV/√Hz
  • 输入电流噪声：3.5pA/√Hz
  • 支持单电源和双电源运行
  • 电流消耗：60mA
  • 关断特性 (1)
    • 1. 功率增益 (Gp) = 8dB；电压增益 (Gv) = 17dB；RL总计 = 200Ω。更多详细信息请参见输出参考节点和增益命名规则部分。