SNOSDF9B
July 2023 – March 2024
LMG2100R044
PRODUCTION DATA
1
1
Features
2
Applications
3
Description
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
Recommended Operating Conditions
5.3
ESD Ratings
5.4
Thermal Information
5.5
Electrical Characteristics
5.6
Typical Characteristics
6
Parameter Measurement Information
6.1
Propagation Delay and Mismatch Measurement
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Control Inputs
7.3.2
Start-up and UVLO
7.3.3
Bootstrap Supply Voltage Clamping
7.3.4
Level Shift
7.4
Device Functional Modes
8
Application and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
Design Requirements
8.2.2
Detailed Design Procedure
8.2.2.1
VCC Bypass Capacitor
8.2.2.2
Bootstrap Capacitor
8.2.2.3
Slew Rate Control
8.2.2.4
Power Dissipation
8.2.3
Application Curves
8.3
Power Supply Recommendations
8.4
Layout
8.4.1
Layout Guidelines
8.4.2
Layout Examples
9
Device and Documentation Support
9.1
Documentation Support
9.1.1
Related Documentation
9.2
Receiving Notification of Documentation Updates
9.3
Support Resources
9.4
Trademarks
9.5
Electrostatic Discharge Caution
9.6
Glossary
10
Revision History
11
Mechanical, Packaging, and Orderable Information
11.1
Package Information
封装选项
请参考 PDF 数据表获取器件具体的封装图。
机械数据 (封装 | 引脚)
RAR|16
散热焊盘机械数据 (封装 | 引脚)
订购信息
snosdf9b_oa
5.3
ESD Ratings
VALUE
UNIT
V
(ESD)
Electrostatic Discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±500
V
Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
±500
V
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.