SNOS469J April   2000  – January 2015 LM8261

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics 2.7 V
    6. 6.6 Electrical Characteristics 5 V
    7. 6.7 Electrical Characteristics ±15 V
    8. 6.8 Typical Characteristics
  7. Application and Implementation
    1. 7.1 Block Diagram and Operational Description
      1. 7.1.1  A) Input Stage
      2. 7.1.2 B) Output Stage
    2. 7.2 Driving Capacitive Loads
    3. 7.3 Estimating the Output Voltage Swing
    4. 7.4 TFT Applications
    5. 7.5 Output Short Circuit Current and Dissipation Issues
    6. 7.6 Other Application Hints
      1. 7.6.1 LM8261 Advantages
  8. Power Supply Recommendations
  9. Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Trademarks
    3. 10.3 Electrostatic Discharge Caution
    4. 10.4 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings(1)

MIN MAX UNIT
VIN Differential ±10 V
Output Short Circuit Duration See(3)(5)
Supply Voltage (V+ - V) 32 V
Voltage at Input/Output pins V+ +0.8 V,
V −0.8 V
V
Storage Temperature Range −65 +150 °C
Junction Temperature(4) 150 °C
Soldering Information: Infrared or Convection (20 sec.) 235 °C
Wave Soldering (10 sec.) 260 °C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Rating indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see Electrical Characteristics 2.7 V.
(2) Human Body Model is 1.5 kΩ in series with 100 pF.
(3) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C.
(4) The maximum power dissipation is a function of TJ(max), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/ RθJA. All numbers apply for packages soldered directly onto a PC board.
(5) Allowable Output Short Circuit duration is infinite for VS ≤ 6 V at room temperature and below. For VS > 6 V, allowable short circuit duration is 1.5 ms.
(6) Machine Model, 0 Ω is series with 200 pF.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)(2) ±2000 V
Machine model (MM)(6) ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 2000-V HBM is possible with the necessary precautions. Pins listed as ±200 V may actually have higher performance.

6.3 Recommended Operating Conditions

MIN MAX UNIT
Supply Voltage (V+ - V) 2.5 30 V
Temperature Range(2) −40 +85 °C

6.4 Thermal Information

THERMAL METRIC(1)(2) DBV UNIT
(5 PINS)
RθJA Junction-to-ambient thermal resistance 325 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The maximum power dissipation is a function of TJ(max), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/ RθJA. All numbers apply for packages soldered directly onto a PC board.

6.5 Electrical Characteristics 2.7 V

Unless otherwise specified, all limits guaranteed for TA = 25°C, V+ = 2.7 V, V = 0 V, VCM = 0.5 V, VO = V+/2, and RL > 1 MΩ to V.(1)
PARAMETER TEST CONDITIONS MIN TYP(2) MAX(3) UNIT
VOS Input Offset Voltage VCM = 0.5 V & VCM = 2.2 V +/−0.7 +/−5 mV
−65°C ≤ TJ ≤ +150°C +/−7
TC VOS Input Offset Average Drift VCM = 0.5 V & VCM = 2.2 V(4) +/−2 µV/C
IB Input Bias Current VCM = 0.5 V(5) −1.20 −2.00 µA
−65°C ≤ TJ ≤ +150°C −2.70
VCM = 2.2 V(5) +0.49 +1.00
−65°C ≤ TJ ≤ +150°C +1.60
IOS Input Offset Current VCM = 0.5 V & VCM = 2.2 V 20 250 nA
−65°C ≤ TJ ≤ +150°C 400
CMRR Common Mode Rejection Ratio VCM stepped from
0 V to 1.0 V
100 76 dB
−65°C ≤ TJ ≤ +150°C 60
VCM stepped from 1.7 V to 2.7 V 100
VCM stepped from
0 V to 2.7 V
70 58
−65°C ≤ TJ ≤ +150°C 50
+PSRR Positive Power Supply Rejection Ratio V+ = 2.7 V to 5 V 104 78 dB
−65°C ≤ TJ ≤ +150°C 74
CMVR Input Common-Mode Voltage Range CMRR > 50 dB −0.3 −0.1 V
−65°C ≤ TJ ≤ +150°C 0.0
3.0 2.8 V
−65°C ≤ TJ ≤ +150°C 2.7
AVOL Large Signal Voltage Gain VO = 0.5 to 2.2 V,
RL = 10K to V
78 70 dB
−65°C ≤ TJ ≤ +150°C 67
VO = 0.5 to 2.2 V,
RL = 2K to V
73 67 dB
−65°C ≤ TJ ≤ +150°C 63
VO Output Swing High RL = 10K to V 2.59 2.49 V
−65°C ≤ TJ ≤ +150°C 2.46
RL = 2K to V 2.53 2.45
−65°C ≤ TJ ≤ +150°C 2.41
Output Swing Low RL = 10K to V 90 100 mV
−65°C ≤ TJ ≤ +150°C 120
ISC Output Short Circuit Current Sourcing to V
VID = 200 mV(6)(7)
48 30 mA
−65°C ≤ TJ ≤ +150°C 20
Sinking to V+
VID = −200 mV(6)(7)
65 50 mA
−65°C ≤ TJ ≤ +150°C 30
IS Supply Current No load,
VCM = 0.5 V
0.95 1.20 mA
−65°C ≤ TJ ≤ +150°C 1.50
SR Slew Rate(8) AV = +1,VI = 2 VPP 9 V/µs
fu Unity Gain-Frequency VI = 10 mV, RL = 2 KΩ to V+/2 10 MHz
GBWP Gain Bandwidth Product f = 50 KHz 21 15.5 MHz
−65°C ≤ TJ ≤ +150°C 14
Phim Phase Margin VI = 10 mV 50 Deg
en Input-Referred Voltage Noise f = 2 KHz, RS = 50 Ω 15 nV/ √Hz
in Input-Referred Current Noise f = 2 KHz 1 pA/ √Hz
fMAX Full Power Bandwidth ZL = (20 pF || 10 KΩ) to V+/2 1 MHz
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self heating where TJ > TA.
(2) Typical Values represent the most likely parametric norm.
(3) All limits are guaranteed by testing or statistical analysis.
(4) Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
(5) Positive current corresponds to current flowing into the device.
(6) Production Short Circuit test is a momentary test. See Note 7.
(7) Allowable Output Short Circuit duration is infinite for VS ≤ 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5 ms.
(8) Slew rate is the slower of the rising and falling slew rates. Connected as a Voltage Follower.

6.6 Electrical Characteristics 5 V(1)

Unless otherwise specified, all limited guaranteed for TA = 25°C, V+ = 5 V, V = 0 V, VCM = 1 V, VO = V+/2, and RL > 1 MΩ to V.
PARAMETER TEST CONDITIONS MIN TYP(2) MAX(3) UNIT
VOS Input Offset Voltage VCM = 1 V & VCM = 4.5 V +/−0.7 +/−5 mV
−65°C ≤ TJ ≤ +150°C +/− 7
TC VOS Input Offset Average Drift VCM = 1 V & VCM = 4.5 V(4) +/−2 µV/°C
IB Input Bias Current VCM = 1 V(5) −1.18 −2.00 µA
−65°C ≤ TJ ≤ +150°C −2.70
VCM = 4.5 V(5) +0.49 +1.00
−65°C ≤ TJ ≤ +150°C +1.60
IOS Input Offset Current VCM = 1 V & VCM = 4.5 V 20 250 nA
−65°C ≤ TJ ≤ +150°C 400
CMRR Common Mode Rejection Ratio VCM stepped from
0 V to 3.3 V
110 84 dB
−65°C ≤ TJ ≤ +150°C 72
VCM stepped from
4 V to 5 V
100
VCM stepped from
0 V to 5 V
80 64
−65°C ≤ TJ ≤ +150°C 61
+PSRR Positive Power Supply Rejection Ratio V+ = 2.7 V to 5 V,
VCM = 0.5 V
104 78 dB
−65°C ≤ TJ ≤ +150°C 74
CMVR Input Common-Mode Voltage Range CMRR > 50 dB −0.3 −0.1 V
−65°C ≤ TJ ≤ +150°C 0.0
5.3 5.1 V
−65°C ≤ TJ ≤ +150°C 5.0
AVOL Large Signal Voltage Gain VO = 0.5 to 4.5 V,
RL = 10 K to V
84 74 dB
−65°C ≤ TJ ≤ +150°C 70
VO = 0.5 to 4.5 V,
RL = 2 K to V
80 70
−65°C ≤ TJ ≤ +150°C 66
VO Output Swing High RL = 10 K to V 4.87 4.75 V
−65°C ≤ TJ ≤ +150°C 4.72
RL = 2 K to V 4.81 4.70
−65°C ≤ TJ ≤ +150°C 4.66
Output Swing Low RL = 10 K to V 86 125 mV
−65°C ≤ TJ ≤ +150°C 135
ISC Output Short Circuit Current Sourcing to V
VID = 200 mV(6)(7)
53 35 mA
−65°C ≤ TJ ≤ +150°C 20
Sinking to V+
VID = −200 mV(6)(7)
75 60
−65°C ≤ TJ ≤ +150°C 50
IS Supply Current No load, VCM = 1 V 0.97 1.25 mA
−65°C ≤ TJ ≤ +150°C 1.75
SR Slew Rate(8) AV = +1, VI = 5 VPP 12 10 V/µs
−65°C ≤ TJ ≤ +150°C 7
fu Unity Gain Frequency VI = 10 mV,
RL = 2 KΩ to V+/2
10.5 MHz
GBWP Gain-Bandwidth Product f = 50 KHz 21 16 MHz
−65°C ≤ TJ ≤ +150°C 15
Phim Phase Margin VI = 10 mV 53 Deg
en Input-Referred Voltage Noise f = 2 KHz, RS = 50 Ω 15 nV/ √hZ
in Input-Referred Current Noise f = 2 KHz 1 pA/ √hZ
fMAX Full Power Bandwidth ZL = (20 pF || 10 kΩ) to V+/2 900 KHz
tS Settling Time (±5%) 100 mVPP Step, 500 pF load 400 ns
THD+N Total Harmonic Distortion + Noise RL = 1 KΩ to V+/2
f = 10 KHz to AV= +2, 4 VPP swing
0.05%
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self heating where TJ > TA.
(2) Typical Values represent the most likely parametric norm.
(3) All limits are guaranteed by testing or statistical analysis.
(4) Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
(5) Positive current corresponds to current flowing into the device.
(6) Production Short Circuit test is a momentary test. See Note 7.
(7) Allowable Output Short Circuit duration is infinite for VS ≤ 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
(8) Slew rate is the slower of the rising and falling slew rates. Connected as a Voltage Follower.

6.7 Electrical Characteristics ±15 V(7)

Unless otherwise specified, all limited guaranteed for TA = 25°C, V+ = 15 V, V = −15 V, VCM = 0 V, VO = 0 V, and RL > 1 MΩ to 0 V.
PARAMETER TEST CONDITIONS MIN TYP(1) MAX(2) UNIT
VOS Input Offset Voltage VCM = −14.5 V & VCM = 14.5 V +/−0.7 +/−7 mV
−65°C ≤ TJ ≤ +150°C +/− 9
TC VOS Input Offset Average Drift VCM = −14.5 V & VCM = 14.5 V(6) +/−2 µV/°C
IB Input Bias Current VCM = −14.5 V(3) −1.05 −2.00 µA
−65°C ≤ TJ ≤ +150°C −2.80
VCM = 14.5 V(3) +0.49 +1.00
−65°C ≤ TJ ≤ +150°C +1.50
IOS Input Offset Current VCM = −14.5 V & VCM = 14.5 V 30 275 nA
−65°C ≤ TJ ≤ +150°C 550
CMRR Common Mode Rejection Ratio VCM stepped from −15 V to 13 V 100 84 dB
−65°C ≤ TJ ≤ +150°C 80
VCM stepped from 14 V to 15 V 100
VCM stepped from −15 V to 15 V 88 74
−65°C ≤ TJ ≤ +150°C 72
+PSRR Positive Power Supply Rejection Ratio V+ = 12 V to 15 V 100 70 dB
−65°C ≤ TJ ≤ +150°C 66
−PSRR Negative Power Supply Rejection Ratio V = −12 V to −15 V 100 70 dB
−65°C ≤ TJ ≤ +150°C 66
CMVR Input Common-Mode Voltage Range CMRR > 50 dB −15.3 −15.1 V
−65°C ≤ TJ ≤ +150°C −15.0
15.3 15.1 V
−65°C ≤ TJ ≤ +150°C 15.0
AVOL Large Signal Voltage Gain VO = 0 V to ±13 V,
RL = 10 KΩ
85 78 dB
−65°C ≤ TJ ≤ +150°C 74
VO = 0 V to ±13 V,
RL = 2 KΩ
79 72
−65°C ≤ TJ ≤ +150°C 66
VO Output Swing High RL = 10 KΩ 14.83 14.65 V
−65°C ≤ TJ ≤ +150°C 14.61
RL = 2 KΩ 14.73 14.60
−65°C ≤ TJ ≤ +150°C 14.55
Output Swing Low RL = 10 KΩ −14.91 −14.75 V
−65°C ≤ TJ ≤ +150°C −14.65
RL = 2 KΩ −14.83 −14.65
−65°C ≤ TJ ≤ +150°C −14.60
ISC Output Short Circuit Current Sourcing to ground
VID = 200 mV(5)(5)
60 40 mA
−65°C ≤ TJ ≤ +150°C 25
Sinking to ground
VID = 200 mV(5)(5)
100 70
−65°C ≤ TJ ≤ +150°C 60
IS Supply Current No load, VCM = 0 V 1.30 1.50 mA
−65°C ≤ TJ ≤ +150°C 1.90
SR Slew Rate(4) AV = +1, VI = 24 VPP 15 10 V/µs
−65°C ≤ TJ ≤ +150°C 8
fu Unity Gain Frequency VI = 10 mV, RL = 2 KΩ 14 MHz
GBWP Gain-Bandwidth Product f = 50 KHz 24 18 MHz
−65°C ≤ TJ ≤ +150°C 16
Phim Phase Margin VI = 10 mV 58 Deg
en Input-Referred Voltage Noise f = 2 KHz, RS = 50 Ω 15 nV/ √hZ
in Input-Referred Current Noise f = 2 KHz 1 pA/ √hZ
fMAX Full Power Bandwidth ZL = 20 pF || 10 KΩ 160 KHz
ts Settling Time (±1%, AV = +1) Positive Step, 5 VPP 320 ns
Negative Step, 5 VPP 600
THD+N Total Harmonic Distortion +Noise RL = 1 KΩ, f = 10 KHz,
AV = +2, 28VPP swing
0.01%
(1) Typical Values represent the most likely parametric norm.
(2) All limits are guaranteed by testing or statistical analysis.
(3) Positive current corresponds to current flowing into the device.
(4) Slew rate is the slower of the rising and falling slew rates. Connected as a Voltage Follower.
(5) Production Short Circuit test is a momentary test. See Note 7.
(6) Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
(7) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self heating where TJ > TA.

6.8 Typical Characteristics

TA = 25°C, Unless Otherwise Noted
10108430.png
Figure 1. VOS vs. VCM for 3 Representative Units
10108431.png
Figure 3. VOS vs. VCM for 3 Representative Units
10108435.png
Figure 5. VOS vs. VS for 3 Representative Units
10108429.png
Figure 2. VOS vs. VCM for 3 Representative Units
10108434.png
Figure 4. VOS vs. VS for 3 Representative Units
10108433.png
Figure 6. VOS vs. VS for 3 Representative Units
10108424.png
Figure 7. IB vs. VCM
10108427.png
Figure 9. IS vs. VCM
10108468.png
Figure 11. IS vs. VCM
10108436.png
Figure 8. IB vs. VS
10108428.png
Figure 10. IS vs. VCM
10108425.png
Figure 12. IS vs. VS (PNP side)
10108426.png
Figure 13. IS vs. VS (NPN side)
10108407.png
Figure 15. Unity Gain Frequency vs. VS
10108404.png
Figure 17. Unity Gain Freq. and Phase Margin vs. VS
10108418.png
Figure 14. Gain/Phase vs. Frequency
10108408.png
Figure 16. Phase Margin vs. VS
10108405.png
Figure 18. Unity Gain Frequency vs. Load
10108406.png
Figure 19. Phase Margin vs. Load
10108414.png
Figure 21. CMRR vs. Frequency
10108417.png
Figure 23. −PSRR vs. Frequency
10108409.png
Figure 20. Unity Gain Freq. and Phase Margin vs. CL
10108416.png
Figure 22. +PSRR vs. Frequency
10108446.png
Figure 24. Output Voltage vs. Output Sourcing Current
10108444.png
Figure 25. Output Voltage vs. Output Sourcing Current
10108410.png
Figure 27. Max Output Swing vs. Load
10108448.png
Figure 29. % Overshoot vs. Cap Load
10108445.png
Figure 26. Output Voltage vs. Output Sinking Current
10108411.png
Figure 28. Max Output Swing vs. Frequency
10108447.png
Figure 30. ±5% Settling Time vs. Cap Load
10108451.png
Figure 31. +SR vs. Cap Load
10108449.png
Figure 33. +SR vs. Cap Load
10108443.png
Figure 35. Settling Time vs. Error Voltage
10108452.png
Figure 32. −SR vs. Cap Load
10108450.png
Figure 34. −SR vs. Cap Load
10108442.png
Figure 36. Settling Time vs. Error Voltage
10108415.png
Figure 37. Input Noise Voltage/Current vs. Frequency
10108412.png
Figure 39. Input Noise Current for Various VCM
10108454.png
Figure 41. Input Noise Current vs. VCM
10108413.png
Figure 38. Input Noise Voltage for Various VCM
10108455.png
Figure 40. Input Noise Voltage vs. VCM
10108423.png
Figure 42. THD+N vs. Frequency
10108422.png
Figure 43. THD+N vs. Frequency
10108419.png
Figure 45. THD+N vs. Amplitude
10108438.png
Figure 47. Small Signal Step Response
10108421.png
Figure 44. THD+N vs. Frequency
10108420.png
Figure 46. THD+N vs. Amplitude
10108440.png
Figure 48. Large Signal Step Response