SNOS469J April   2000  – January 2015 LM8261

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics 2.7 V
    6. 6.6 Electrical Characteristics 5 V
    7. 6.7 Electrical Characteristics ±15 V
    8. 6.8 Typical Characteristics
  7. 7 Application and Implementation
    1. 7.1 Block Diagram and Operational Description
      1. 7.1.1  A) Input Stage
      2. 7.1.2 B) Output Stage
    2. 7.2 Driving Capacitive Loads
    3. 7.3 Estimating the Output Voltage Swing
    4. 7.4 TFT Applications
    5. 7.5 Output Short Circuit Current and Dissipation Issues
    6. 7.6 Other Application Hints
      1. 7.6.1 LM8261 Advantages
  8. 8 Power Supply Recommendations
  9. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Trademarks
    3. 10.3 Electrostatic Discharge Caution
    4. 10.4 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

10 Device and Documentation Support

10.1 Documentation Support

10.1.1 Related Documentation

For related documentation, see IC Package Thermal Metrics Application Report, SPRA953

10.2 Trademarks

All other trademarks are the property of their respective owners.

10.3 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

10.4 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.