ZHCSMT1 September   2021 LM74700-EP

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Voltage
      2. 8.3.2 Charge Pump
      3. 8.3.3 Gate Driver
      4. 8.3.4 Enable
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Conduction Mode
        1. 8.4.2.1 Regulated Conduction Mode
        2. 8.4.2.2 Full Conduction Mode
        3. 8.4.2.3 Reverse Current Protection Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Design Considerations
        2. 9.2.2.2 MOSFET Selection
        3. 9.2.2.3 Charge Pump VCAP, input and output capacitance
      3. 9.2.3 Selection of TVS Diodes for 12-V Battery Protection Applications
      4. 9.2.4 Selection of TVS Diodes and MOSFET for 24-V Battery Protection Applications
      5. 9.2.5 Application Curves
    3. 9.3 OR-ing Application Configuration
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 接收文档更新通知
    2. 12.2 支持资源
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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6.5 Electrical Characteristics

TJ = –55°C to +125°C; typical values at TJ = 25°C, V(ANODE) = 12 V, C(VCAP) = 0.1 µF, V(EN) = 3.3 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VANODE SUPPLY VOLTAGE
V(ANODE) Operating input voltage 4 60 V
V(ANODE POR) VANODE POR Rising threshold 3.9 V
VANODE POR Falling threshold 2.2 2.8 3.1 V
V(ANODE POR(Hys)) VANODE POR Hysteresis 0.39 0.7 V
I(SHDN) Shutdown Supply Current V(EN) = 0 V 0.9 1.5 µA
I(Q) Operating Quiescent Current 80 140 µA
VANODE = 28 V 80 150 µA
ENABLE INPUT
V(EN_IL) Enable input low threshold 0.5 0.9 1.22 V
V(EN_IH) Enable input high threshold 1.06 2 2.6
V(EN_Hys) Enable Hysteresis 0.52 1.42 V
I(EN) Enable sink current V(EN) = 12 V 3 5 µA
VANODE to VCATHODE
V(AK REG) Regulated Forward V(AK) Threshold 13 20 30 mV
VANODE = 28 V 13 20 30 mV
V(AK) V(AK) threshold for full conduction mode 34 55 70 mV
V(AK REV) V(AK) threshold for reverse current blocking –17 –11 –5 mV
VANODE = 28 V –17 –11 –5 mV
Gm Regulation Error AMP Transconductance (1) 440 1800 4900 µA/V
GATE DRIVE
I(GATE) Peak source current V(ANODE) – V(CATHODE) = 100 mV, 
V(GATE) – V(ANODE) = 5 V		 3 11 mA
Peak sink current V(ANODE) – V(CATHODE) = –20 mV, 
V(GATE) – V(ANODE) = 5 V		 2370 mA
Regulation max sink current V(ANODE) – V(CATHODE) = 0 V, 
V(GATE) – V(ANODE) = 5 V		 2 26 µA
RDSON discharge switch RDSON V(ANODE) – V(CATHODE) = –20 mV, 
V(GATE) – V(ANODE) = 100 mV		 0.4 2 Ω
CHARGE PUMP
I(VCAP) Charge Pump source current (Charge pump on) V(VCAP) – V(ANODE) = 7 V 162 300 600 µA
Charge Pump sink current (Charge pump off) V(VCAP) – V(ANODE) = 14 V 5 10 µA
V(VCAP) – V(ANODE) Charge pump voltage at V(ANODE) = 3.2 V I(VCAP) ≤ 30 µA 8 V
Charge pump turn on voltage 10.4 11.6 12.9 V
Charge pump turn off voltage 11 12.4 13.9 V
Charge Pump Enable comparator Hysteresis 0.54 0.8 1.36 V
V(VCAP UVLO) V(VCAP) – V(ANODE) UV release at rising edge V(ANODE) – V(CATHODE) = 100 mV 5.6 6.6 8.7 V
V(VCAP) – V(ANODE) UV threshold at falling edge V(ANODE) – V(CATHODE) = 100 mV 5.05 5.4 6 V
CATHODE
I(CATHODE) CATHODE sink current V(ANODE) = 12 V, V(ANODE) – V(CATHODE) = –100 mV 1.2 2 µA
V(ANODE) – V(CATHODE) = –100 mV 1.6 2.2 µA
V(ANODE) = –12 V, V(CATHODE) = 12 V 1.25 2.06 µA
(1) Parameter guaranteed by design and characterization