ZHCSEV7I June   2011  – October 2019 LM5113

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化应用示意图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input and Output
      2. 7.3.2 Start-Up and UVLO
      3. 7.3.3 HS Negative Voltage and Bootstrap Supply Voltage Clamping
      4. 7.3.4 Level Shift
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VDD Bypass Capacitor
        2. 8.2.2.2 Bootstrap Capacitor
        3. 8.2.2.3 Power Dissipation
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 支持资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 修订历史记录

Changes from H Revision (January 2018) to I Revision

  • 从数据表标题中删除了“NRND”Go
  • 删除了 NRND 披露声明Go

Changes from G Revision (January 2016) to H Revision

  • 将数据表标题从“用于增强模式 GaN FET 的 LM5113 100V、1.2A/5A 半桥栅极驱动器”更改成了“LM5113 80V、1.2A、5A 半桥 GaN 驱动器”Go
  • 在数据表中添加了“不建议用于新设计”声明Go
  • 增加内容到说明部分Go
  • 更改了第一页的重要图形 Go
  • Removed HB to VDD parameter from the Absolute Maximum Ratings tableGo
  • Changed the HS to VSS maximum from: 100 V to: 93 VGo
  • Changed the HB to VSS maximum from: 107 V to: V(HS) + 7 VGo
  • Changed the human-body model value from: ±2000 to: ±1000Go
  • Changed HS maximum from: 100 V to: 90 V Go
  • Changed the Functional Block DiagramGo
  • Changed the last paragraph and add new images to the Input and Output section Go
  • Added content to the Start-up and UVLO section Go

Changes from F Revision (April 2013) to G Revision

  • 添加了 ESD 额定值 表、特性 说明部分、器件功能模式、应用和实施部分、电源相关建议部分、布局部分、器件和文档支持部分以及机械、封装和可订购信息部分Go

Changes from E Revision (April 2013) to F Revision

  • 将美国国家半导体数据表的版面布局更改成了 TI 格式Go