ZHCSD41 数据表 | 德州仪器 TI.com.cn

ZHCSD41A DECEMBER 2012 – November 2014 LM10011

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

DSC|10
- MPDS239E

散热焊盘机械数据 (封装 | 引脚)

DSC|10
- QFND436

订购信息

6 Specifications

6.1 Absolute Maximum Ratings⁽¹⁾⁽²⁾

over operating free-air temperature range (unless otherwise noted)

	MIN	MAX	UNIT
VDD, EN, IDAC_OUT, MODE	–0.3	6	V
VIDA, VIDB, VIDC, VIDS	–0.3	6	V
Junction Temperature		150	°C

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.

(2) If Military- or Aerospace-specified devices are required, please contact the Texas Instruments Sales Office / Distributors for availability and specifications.

6.2 Handling Ratings

			MIN	MAX	UNIT
T_stg	Storage temperature range		–65	150	°C
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾		2	kV
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾		1	kV

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

	MIN	MAX	UNIT
VDD	2.97	5.5	V
IDAC_OUT	–0.3	VDD – 1.75	V
VIDA, VIDB, VIDC, VIDS, EN, MODE	–0.3	5.5	V
Junction Temperature	−40	125	°C
Ambient Temperature	−40	125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LM10011	UNIT
		DSC
		10 PINS
R_θJA	Junction-to-ambient thermal resistance⁽²⁾	52.1	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance⁽³⁾	30.6
R_θJB	Junction-to-board thermal resistance⁽⁴⁾	26.8
ψ_JT	Junction-to-top characterization parameter⁽⁵⁾	0.9
ψ_JB	Junction-to-board characterization parameter⁽⁶⁾	26.9
R_θJC(bot)	Junction-to-case (bottom) thermal resistance⁽⁷⁾	7.7

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a.

(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8.

(5) The junction-to-top characterization parameter, ψ_JT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining R_θJA, using a procedure described in JESD51-2a (sections 6 and 7).

(6) The junction-to-board characterization parameter, ψ_JB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining R_θJA, using a procedure described in JESD51-2a (sections 6 and 7).

(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

6.5 Electrical Characteristics

Typical values correspond to T_J = 25°C. Minimum and maximum limits apply over –40°C to 125°C junction temperature range unless otherwise stated.⁽⁴⁾⁽⁵⁾

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY, UVLO, AND ENABLE
IQ	Quiescent current	VDD = 5.0 V, V_EN = 2.0 V		260	300	µA
IQ_FS	Quiescent current, IDAC_OUT = IFS_6	VDD = 5.0 V, V_EN = 2.0 V, IFS_6		382		µA
IQ_DIS	Quiescent current disabled	VDD = 5.0 V, V_EN = 0.0 V		45	65	µA
VUVLO_R	Undervoltage rising threshold	VDD rising		2.65	2.95	V
VUVLO_F	Undervoltage falling threshold	VDD falling	2.2	2.45		V
VUVLO_HYS	Hysteresis			200		mV
VEN	Enable rising threshold	V_EN rising	1.20	1.34	1.45	V
VEN_HYS	Enable hysteresis		50	100	180	mV
IEN	Enable pullup current			2		µA
IDAC_OUT
ACC	Accuracy	Measured at full scale	–1.25		1.25	%
ACC	Accuracy	Measured at full scale, 0°C to 100°C	–1.0		1.0	%
LSB_6	DAC step size, 6-bit mode	IFS_6 / (2⁶ – 1)		940		nA
LSB_4	DAC step size, 4-bit mode	IFS_4 / (2⁴ – 1)		3.76		µA
IFS_6	Full-scale output current (6-bit mode)	VID[5:0] = 000000b		59.2		µA
IFS_4	Full-scale output current (4-bit mode)	VID[3:0] = 0000b		56.4		µA
INL	Integral non-linearity		–1		1	LSB_6
DNL	Differential non-linearity		–0.25		0.25	LSB_6
OFFSET	Offset current	VID[5:0] = 111111b (6-bit), VID[3:0] = 1111b (4-bit)		60		nA
VOUT_MAX	IDAC_OUT compliance voltage	VDD = 3 V, VDD-V_{IDAC_OUT}			1.75	V
START-UP SET CURRENT
VSETFSR	SET pin voltage FSR		1.12	1.2	1.23	V
SETRES	SET ADC resolution			4		bits
SETRNG	SET ADC current full-scale range			56.4		µA
ISET	SET Current		4.75	5.1	5.40	µA
SET0	Start-up DAC error, code 0	R_SET = 0 Ω, I_{DAC_OUT} = 56.4 µA	0		0	LSB
SET1	Start-up DAC error, code 1	R_SET = 21.0 kΩ⁽²⁾, I_{DAC_OUT} = 52.7 µA	0		0	LSB
SET2	Start-up DAC error, code 2	R_SET = 35.7 kΩ⁽²⁾, I_{DAC_OUT} = 48.9 µA	0		0	LSB
SET3	Start-up DAC error, code 3	R_SET= 51.1 kΩ⁽²⁾, I_{DAC_OUT} = 45.2 µA	0		0	LSB
SET4	Start-up DAC error, code 4⁽¹⁾	R_SET = 71.5 kΩ⁽²⁾, I_{DAC_OUT} = 41.4 µA	0		1	LSB
SET5	Start-up DAC error, code 5⁽¹⁾	R_SET = 86.6 kΩ⁽²⁾, I_{DAC_OUT} = 37.7 µA	0		1	LSB
SET6	Start-up DAC error, code 6⁽¹⁾	R_SET = 105 kΩ⁽²⁾, I_{DAC_OUT} = 33.9 µA	0		1	LSB
SET7	Start-up DAC error, code 7⁽¹⁾	R_SET = 118 kΩ⁽²⁾, I_{DAC_OUT} = 30.1 µA	0		1	LSB
SET8	Start-up DAC error, code 8⁽¹⁾	R_SET = 140 kΩ⁽²⁾, I_{DAC_OUT} =26.4 µA	0		1	LSB
SET9	Start-up DAC error, code 9⁽¹⁾	R_SET= 154 kΩ⁽²⁾, I_{DAC_OUT} = 22.6 µA	0		1	LSB
SET10	Start-up DAC error, code 10⁽¹⁾	R_SET = 169 kΩ⁽²⁾, I_{DAC_OUT} = 18.8 µA	0		1	LSB
SET11	Start-up DAC error, code 11⁽¹⁾	R_SET = 182 kΩ⁽²⁾, I_{DAC_OUT} = 15.1 µA	0		1	LSB
SET12	Start-up DAC error, code 12⁽¹⁾	R_SET = 200 kΩ⁽²⁾, I_{DAC_OUT} = 11.3 µA	0		1	LSB
SET13	Start-up DAC error, code 13⁽¹⁾	R_SET = 215 kΩ⁽²⁾, I_{DAC_OUT} = 7.59 µA	0		1	LSB
SET14	Start-up DAC error, code 14⁽¹⁾	R_SET = 237 kΩ⁽²⁾, I_{DAC_OUT} = 3.80 µA	0		1	LSB
SET15	Start-up DAC error, code 15	R_SET = 301 kΩ⁽²⁾, I_{DAC_OUT} = 0.06 µA	0		0	LSB
VID LOGIC INPUTS⁽³⁾
V_IL	Input voltage low				0.75	V
V_IH	Input voltage high		1.0			V
I_IL	Input current low		–3.5			µA
I_IH	Input current high				5	µA
t_DEGLITCH	Input deglitch time			3.6		µs
t₁	Input delay time	VIDS rising edge			1	µs
t₂	Input hold time VIDA, VIDB, VIDC valid	VIDS falling edge	20			µs
t₃	Input delay time	VIDS falling edge			1	µs
t₄	Input hold time VIDA, VIDB, VIDC valid	VIDS rising edge	20			µs
t₅	Delay to beginning of IDAC_OUT transition	Measured from VIDS rising edge		6.3	10	µs
t₆	IDAC_OUT transition time	Time constant for exponential rise		40		µs
t₇	Minimum hold time in 4-bit mode	VIDA, VIDB, VIDC, VIDS		4.4		µs

(1) "+1" LSB implies a positive step in CODE. LSB is in reference to LSB_4.

(2) R_SET is based on 1% E96 standard resistor values.

(3) For VID timing, see Figure 1.

(4) All hot and cold limits are specified by correlating the electrical characteristics to process and temperature variations and applying statistical process control.

(5) The junction temperature (T_J in °C) is calculated from the ambient temperature (T_A in °C) and power dissipation (P_D in Watts) as follows: T_J = T_A + (P_D × R_θJA) where R_θJA (in °C/W) is the package thermal impedance provided in the Thermal Information section.