ZHCSID3E September   1997  – June 2018 ISO124

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化原理图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
      1. 7.1.1 Modulator
      2. 7.1.2 Demodulator
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Isolation Amplifier
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Carrier Frequency Considerations
      2. 8.1.2 Isolation Mode Voltage Induced Errors
      3. 8.1.3 High IMV dV/dt Errors
      4. 8.1.4 High Voltage Testing
    2. 8.2 Typical Applications
      1. 8.2.1 Output Filters
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Battery Monitor
      3. 8.2.3 Programmable Gain Amplifier
      4. 8.2.4 Thermocouple Amplifier
      5. 8.2.5 Isolated 4-mA to 20-mA Instrument Loop
      6. 8.2.6 Single-Supply Operation of the ISO124 Isolation Amplifier
      7. 8.2.7 Input-Side Powered ISO Amplifier
      8. 8.2.8 Powered ISO Amplifier With Three-Port Isolation
  9. 9 Power Supply Recommendations
    1. 9.1 Signal and Supply Connections
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • NVF|8
  • DVA|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

10.1 Layout Guidelines

To maintain the isolation barrier of the device, the distance between the high-side ground (pin 16 or 28) and the low-side ground (pin 8 or 14) should be kept at maximum; that is, the entire area underneath the device should be kept free of any conducting materials.