SBOS247C June   2002  – November 2015 INA217

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: VS = ±15 V
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Basic Connections
      2. 7.3.2 Gain-Set Resistor
      3. 7.3.3 Noise Performance
      4. 7.3.4 Input Considerations
      5. 7.3.5 Offset Voltage Trim
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 TINA-TI (Free Software Download)
        2. 11.1.1.2 TI Precision Designs
        3. 11.1.1.3 WEBENCH® Filter Designer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
V+ to V– Supply voltage ±18 V
Signal input terminals Voltage(2) (V–) – 0.5 (V+) + 0.5 V
Current(2) 10 mA
Output short circuit(3) Continuous
Operating temperature –55 125 °C
Junction temperature 300 °C
Tstg Storage temperature –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails should be current limited to 10 mA or less.
(3) Short-circuit to ground, one amplifier per package.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V+ to V– Supply voltage ±4.5 ±15 ±18 V
TA Ambient Temperature -40 25 85 °C

6.4 Thermal Information

THERMAL METRIC(1) INA217 UNIT
DW (SOIC) P (PDIP)
16 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 64.3 46.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 24.9 34.5 °C/W
RθJB Junction-to-board thermal resistance 29.4 23.5 °C/W
ψJT Junction-to-top characterization parameter 3.3 11.7 °C/W
ψJB Junction-to-board characterization parameter 28.8 23.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics: VS = ±15 V

TA = 25°C, RL = 2 kΩ, VS = ±15 V, unless otherwise noted.
PARAMETER TEST CONDITIONS TA = 25°C UNIT
MIN TYP MAX
GAIN EQUATION(1) G = 1 + 10k/RG
Range 1 to 10000 V/V
Gain Error G = 1 ±0.1% ±0.25%
G = 10 ±0.2% ±0.7%
G = 100 ±0.2%
G = 1000 ±0.5%
GAIN TEMPERATURE DRIFT COEFFICIENT
G = 1 TA = –40°C to 85°C ±3 ±10 ppm/°C
G > 10 TA = –40°C to 85°C ±40 ±100 ppm/°C
Nonlinearity G = 1 ±0.0003 % of FS
G = 100 ±0.0006 % of FS
INPUT STAGE NOISE
Voltage Noise fO = 1 kHz RSOURCE = 0 Ω 1.3 nV/√Hz
fO = 100 Hz 1.5 nV/√Hz
fO = 10 Hz 3.5 nV/√Hz
Current Noise, fO = 1 kHz 0.8 pA/√Hz
OUTPUT STAGE NOISE
Voltage Noise, fO = 1 kHz 90 nV/√Hz
INPUT OFFSET VOLTAGE
Input Offset Voltage VCM = VOUT = 0 V 50 + 2000/G 250 + 5000/G µV
vs Temperature TA = –40°C to 85°C 1 + 20/G µV/°C
vs Power Supply VS = ±4.5 V to ±18 V 1 + 50/G 3 + 200/G µV/V
INPUT VOLTAGE RANGE
Common-Mode Voltage Range VIN+ – VIN– = 0V (V+) – 4 (V+) – 3 V
VIN+ – VIN– = 0V (V–) + 4 (V–) + 3 V
Common-Mode Rejection G = 1 VCM = ±11 V, RSRC = 0 Ω 70 80 dB
G = 100 100 116 dB
INPUT BIAS CURRENT
Initial Bias Current 2 12 µA
vs Temperature TA = –40°C to 85°C 10 nA/°C
Initial Offset Current 0.1 1 µA
vs Temperature TA = –40°C to 85°C 0.5 nA/°C
INPUT IMPEDANCE
Differential 60 || 2 MΩ || pF
Common-Mode 60 || 2 MΩ || pF
DYNAMIC RESPONSE
Bandwidth, Small Signal, –3d B
G = 1 3.4 MHz
G = 100 800 kHz
Slew Rate 15 V/µs
THD+Noise, f = 1 kHz G = 100 0.004%
Settling Time 0.1% G = 100, 10V Step 2 µs
0.01% G = 100, 10V Step 3.5 µs
Overload Recovery 50% Overdrive 1 µs
OUTPUT
Voltage RL to GND (V+) – 2
(V–) + 2		 (V+) – 1.8
(V–) + 1.8		 V
V
Load Capacitance Stability 1000 pF
Short Circuit Current Continuous-to-Common ±60 mA
POWER SUPPLY
Rated Voltage ±15 V
Voltage Range ±4.5 ±18 V
Current, Quiescent IO = 0 mA ±10 ±12 mA
TEMPERATURE RANGE
Specification –40 85 °C
Operating –40 125 °C
(1) Gain accuracy is a function of external RG.

6.6 Typical Characteristics

At TA = 25°C, VS = ±15 V, RL = 2 kΩ, unless otherwise noted.
INA217 graph_01_sbos247.gif
Figure 1. Gain vs Frequency
INA217 graph_03_sbos247.gif
Figure 3. Noise Voltage (RTI) vs Frequency
INA217 graph_05_sbos247.gif
Figure 5. CMR vs Frequency
INA217 graph_07_sbos247.gif
Figure 7. Output Voltage Swing vs Output Current
INA217 graph_09_sbos247.gif
G = 1
Figure 9. Small-Signal Transient Response
INA217 graph_11_sbos247.gif
G = 1
Figure 11. Large-Signal Transient Response
INA217 graph_02_sbos247.gif
Figure 2. THD+N vs Frequency
INA217 graph_04_sbos247.gif
Figure 4. Current Noise Spectral Density
INA217 graph_06_sbos247.gif
Figure 6. Power-Supply Rejection vs Frequency
INA217 graph_08_sbos247.gif
Figure 8. Settling Time vs Gain
INA217 graph_10_sbos247.gif
G = 100
Figure 10. Small-Signal Transient Response
INA217 graph_12_sbos247.gif
G = 100
Figure 12. Large-Signal Transient Response