ZHCSIS5B 数据表 | 德州仪器 TI.com.cn

ZHCSIS5B May 2018 – January 2024 ESDS302 , ESDS304

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

5.6 Electrical Characteristics

At TA = 25°C unless otherwise noted

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage	I_IO < 500nA, across operating temperature range			3.6	V
I_LEAKAGE	Leakage current at 3.6V	V_IO = 3.6V, Any IO pin to GND		3	50	nA
V_BRF	Breakdown voltage, Any IO pin to GND ⁽¹⁾	I_IO = 1mA	4.5		7.5	V
V_FWD	Diode forward voltage, GND to IO pin	I_IO = 1mA		0.8		V
V_HOLD	Holding voltage, Any IO pin to GND ⁽²⁾	I_IO = 1mA		5		V
V_CLAMP	Surge Clamping voltage, t_p = 8/20µs	I_PP = 1 A, Any IO pin to GND		5.1		V
		I_PP = 12A, Any IO pin to GND		6		V
		I_PP = 1 A, GND to any IO pin		1.2		V
		I_PP = 12A, GND to any IO pin		3		V
	TLP Clamping Voltage, t_p= 100ns	I_PP = 16A, any IO to GND pin		5.8		V
	TLP Clamping Voltage, t_p= 100ns	I_PP = 16A, GND to any IO pin		3.1		V
C_LINE	Line capacitance, any IO to GND	V_IO = 0V, V_p-p = 30mV, f = 1MHz		2.3	2.8	pF
ΔC_LINE	Variation of line capacitance	C_LINE1 - C_LINE2, V_IO = 0V, Vp-p = 30mV, f = 1MHz		0.05	0.1	pF
C_CROSS	Line-to-line capacitance	V_IO = 0V, V_rms = 30mV, f = 1MHz		1.25	1.5	pF

(1) V_BRF is defined as the max voltage obtained at 1mA when sweeping the voltage up, before the device latches into the snapback state

(2) V_HOLD is defined as the voltage when 1mA is applied, after the device has successfully latched into the snapback state.